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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/81919

    Title: 使用40奈米互補式金氧半製程之85-GHz功率放大器設計;A 85-GHz Power Amplifier Design in 40-nm CMOS Process
    Authors: 黃嘉暐;Huang, Chia-Wei
    Contributors: 電機工程學系
    Keywords: 功率放大器;40奈米互補式金氧半製程;太赫茲波;毫米波;發射機;PA;40-nm CMOS;THz Wave;mmWave;Transmitter
    Date: 2019-10-02
    Issue Date: 2020-01-07 14:38:10 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 本篇論文提出一個85-GHz功率放大器,應用於340-GHz影像雷達之發射機,使用40-nm CMOS製程,電路架構為兩級之共源極差動放大器。為了提升增益及穩定度,加入中和電容來補償電晶體閘極與汲極間之回授路徑。使用了變壓器作為共振耦合網路的技術,具有阻抗匹配網路及巴倫器的效果。此85-GHz功率放大器經由on-wafer量測,其飽和功率為10.85 dBm,輸出1dB功率壓縮點為10.76 dBm,最佳功率附加效益為8.5%。
    由於對資料快速取得、多媒體品質及手機多媒體通訊之需求,無線通訊系統的傳輸速率越來越快。本篇論文提出一個100-GHz功率放大器,應用於200-GHz高速振幅偏移調變無線發射機,使用40-nm CMOS製程來實現。設計流程如前,使用中和電容來提升穩定度及增益,並使用變壓器作為阻抗匹配網路。此100-GHz功率放大器在0.9 V的偏壓模擬下,具有10.9 dBm的飽和功率,輸出1dB功率壓縮點為7.4 dBm,最佳功率附加效益為11%,頻寬為25.3%。此200-GHz高速振幅偏移調變無線發射機之電路,包含壓控震盪器、解碼器、緩衝器、電壓放大器、功率放大器、二倍頻器、振幅偏移調變器及介電共振器天線。訊號經由天線輻射前,在工作頻率為200-GHz時,輸出功率為0.3 dBm。調變訊號經由PCB之鎊線連接結構進入調變器後,此發射機調變速度可達20-Gbps。
    ;This thesis proposes a 85-GHz power amplifier, which is applied to 340-GHz transmitter of imaging radar, is using TSMC 40-nm CMOS technology for realizing. Two-stage differential power amplifier is implemented with common source mode. The neutralizing capacitor mitigates the intrinsic gate-drain feedback of each transistor for increasing power gain and stability. Transformers act as resonator coupling networks, which work as impedance matching networks and baluns. The on-wafer measurement results of 85-GHz power amplifier provide Psat of 10.85 dBm, OP1dB of 10.76 dBm, and maximum PAE of 8.5%.
    Owing to high-speed requirement of data, quality of multimedia, and multimedia communication of mobile phone, the data rate of wireless communication system is getting faster and faster. This thesis proposes a 100-GHz power amplifier of 200-GHz high-speed ASK wireless transmitter using TSMC 40-nm CMOS technology. The design flow is the same as previous, using neutralizing capacitors for increasing the stability and gain, and using transformers for impedance matching networks. The simulation results of 100-GHz power amplifier, with 0.9 V supply voltage, provide Psat of 10.9 dBm, OP1dB of 7.4 dBm, maximum PAE of 11%, and the 3-dB bandwidth of 25.3%. The circuits of 200-GHz ASK wireless transmitter consist of a voltage control oscillator, a decoder, a buffer, a voltage amplifier, a power amplifier, a doubler, an ASK moduler, and a dielectric resonator antenna. The radiated output power reaches to 0.3 dBm at 200-GHz. After sending the modulated signal to ASK moduler via bondwire interconnect of PCB, the data rate of this transmitter can reach to 20-Gbps.
    Appears in Collections:[電機工程研究所] 博碩士論文

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