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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/81920

    Title: 應用於太赫茲通訊之 40 奈米互補式金氧半二倍頻器設計;Frequency Doublers Design in 40-nm CMOS for THz Communication Applications
    Authors: 黃昱翔;Huang, Yu-Siang
    Contributors: 電機工程學系
    Keywords: 太赫茲波;毫米波;二倍頻器;振幅偏移調變器;發射機;THz wave;mm wave;doubler;modulator;transmitter
    Date: 2019-10-02
    Issue Date: 2020-01-07 14:38:14 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 本篇論文提出一個應用在340-GHz無線收發機的170-GHz二倍頻器以及應用在200-GHz無線發射機中的100-GHz二倍頻器與200-GHz振幅偏移調變器,本次電路使用TSMC 40奈米互補式金氧半導體製程來實現。170-GHz二倍頻器使用current reuse架構來進行設計,訊號經由170-GHz放大器放大訊號後再由170-GHz二倍頻器將頻率從170-GHz倍頻至340-GHz,170-GHz放大器使用交叉耦合電容提高增益,最後在170-GHz二倍頻器汲極輸出340-GHz訊號,輸出功率達到-7.8 dBm,此時最大轉換增益為-14 dB。
    關於100-GHz二倍頻器架構上採用差動輸入對電晶體來實現,最後在100-GHz二倍頻器汲極輸出200-GHz訊號,輸出功率達到2.3 dBm,此時最大轉換增益為-7.6 dB。200-GHz無線發射機架構由100-GHz壓控振盪器產生100-GHz訊號,此時輸出功率為-3.5 dBm,透過100-GHz緩衝器以及100-GHz放大器提高增益後再由100-GHz功率放大器放大功率,此時在100-GHz高輸出功率的情況下驅動100-GHz二倍頻器將頻率倍頻至200-GHz,此處為200-GHz振幅偏移調變器藉由20-Gbps數位訊號來控制振幅偏移調變器來進行調變,數位訊號輸入端為了避免波形失真串聯四級反相器後接上200-GHz振幅偏移調變器,200-GHz調變器的損耗與隔離度分別為3.3 dB與20.2 dB,調變後Post-simulation模擬結果輸出功率0.3 dBm至200-GHz介質共振天線輻射發射,此天線增益為-1.2 dBi,整體200-GHz無線發射機頻寬為6.2 %(193.2-GHz~205.6-GHz),功耗為230 mW。
    ;This thesis presents a 170-GHz frequency doubler, a 100-GHz frequency doubler, and a 200-GHz ASK modulator in 40-nm CMOS process. The 170-GHz frequency doubler which is designed with current reuse technique contains a differential amplifier and a frequency doubling NMOS pair. The differential amplifier is used to provide higher gain and the frequency doubling NMOS pair is used to generate second order harmonic signal. This 170-GHz frequency doubler can provide -7.8 dBm output power with the maximum conversion gain of -14 dB.
    Both 100-GHz frequency doubler and 200-GHz ASK modulator are applied to 200-GHz transmitter with ASK modulation. The 200-GHz transmitter consists of a 100-GHz voltage-controlled oscillator, buffers, a power amplifier, a frequency doubler, a 200-GHz ASK modulator, and an antenna. The 100-GHz frequency doubler achieves 2.3 dBm output power with the maximum conversion gain of -7.6 dB, which can maximize second order harmonic generation with a differential NMOS pair. The insertion loss of the ASK modulator is 3.3 dB and isolation of the ASK modulator is 20.2 dB. The 100-GHz oscillator and buffers achieve output power of -3.5 dBm. The signal at 200-GHz modulated by 20-Gbps digital data is transmitted to the antenna. The output power of this 200-GHz transmitter is 0.3 dBm. The bandwidth of this 200-GHz transmitter is 6.2 % (193.2-GHz~205.6-GHz) and total consumption of this 200-GHz transmitter is 230 mW.
    Appears in Collections:[電機工程研究所] 博碩士論文

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