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|Title: ||砷化銦鎵/磷化銦單光子崩潰二極體正弦波 閘控模式之暗與光特性分析;Dark and Illumination Characteristics Analysis of InGaAs/InP Single Photon Avalanche Diodes Using Sinusoidal Wave Gating|
|Authors: ||許瑞祥;Hsu, Jui-Hsiang|
|Issue Date: ||2020-01-07 14:39:15 (UTC+8)|
;In recent years, InGaAs/InP single photon avalanche diodes (SPADs) have been widely studied. The detectors are capable of detecting near infrared light, therefore they are commonly used for the applications based on optical fiber links such as quantum communication and quantum computation. The III-V based SPADs have higher dark count as compared to the Si-based SPAD because III-V materials is prone to defects in epitaxy, which restricts the practical applications of low-light level and long range detection. In this thesis, we compare the dark count characteristics of SPAD under two different operation modes of the sinusoidal wave gated mode and the pulsed gated mode, anticipating that our investigation could provide an operation guideline for SPAD-based applications.
In this work, we operate the SPAD using sinusoidal wave gated mode for that it could effectively circumvent the capacitive signals and hence reduce the false counts as well as lower the discrimination level as compared to the SPAD using pulsed gated mode. In experiment, the dark count rates are compared for two different gated modes under various conditions, including temperature, operating frequency, and peak-to-peak amplitude of sinusoidal wave. We find that the dark count rate for pulsed gated mode performs better than that for sinusoidal wave gated mode at the whole temperature range. However, while the operating frequency is varied, the DCP shows distinct behavior for such two operation modes. The DCP for SPAD under sinusoidal wave gating performs better at high operating frequency, which is attributed to the smaller effective gate window at higher frequency. Based on this concept, we tend to tune the effective gate window by varying the peak-to-peak amplitude of sinusoidal wave. Our results show the DCP can be effectively improved by increasing the peak-to-peak amplitude of sinusoidal wave at the temperature range of 100 K to 200 K. It is worthy to especially point out that the dark count probability per gate is suppressed to lower than 10-4 % at the temperature of 200K.
|Appears in Collections:||[電機工程研究所] 博碩士論文|
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