English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 80990/80990 (100%)
造訪人次 : 41625924      線上人數 : 1693
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋


    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/83254


    題名: BiVO4為基底的光陽極應用在選擇性氧化HMF及其衍生物;Photoelectrochemical selective oxidation of HMF derivatives on BiVO4-based photoanode
    作者: 趙冠傑;Zhao, Guan-Jie
    貢獻者: 化學工程與材料工程學系
    關鍵詞: 光陽極;選擇性氧化;5-羥甲基糠醛;BiVO4;selectove oxidation;HMF
    日期: 2020-08-18
    上傳時間: 2020-09-02 15:15:04 (UTC+8)
    出版者: 國立中央大學
    摘要: 光電化學系統(PEC)可以像自然界通過光合作用一樣直接利用半導體
    電極中的光生電子-電動對來催化反應,若使用生物質當反應物進行選擇性氧化來生成高經濟價值的產物,將是一道對環境友善且節省能源的製程。我們 究 嘗 試 開 發 吸 收 可 見 光 的 光 陽 極 , 並 應 用 在 5- 羥甲基糠醛 (5-hydroxymethylfurfural, HMF)的選擇性氧化上。本研究首先用旋轉塗佈法製備 BiVO4 薄膜光電極,並經由塗佈緩衝層、保護層和裝載共觸媒來提升光電極之性能。緩衝層改善了 BiVO4 表面的性質,使晶粒更為均一完整,在1.2 V vs. RHE 下,光電流密度提升 33%,且 IPCE 在波段 400 nm 時從 16%提升至 34%;NiOx 共觸媒的裝載提升了氧化動力,讓水解反應之起始電位往還原方向 0.2 V vs. RHE,但在高偏壓區的電流卻出現被抑制的情形,代表也存在界面與表面的問題需要克服;保護層 TiO2 的性質有類似透明導電氧化物(Transparent conductive oxide)的作用,能有效降低半導體與電解液界面之電子-電洞對再結合。而後我們選用光電流密度最高的 BiVO4/SnO2光電極在不同離子電解液與 pH 值環境下測試穩定性,發現在 pH=10 的硼酸鈉緩衝溶液有最好的表現性,並在此進行 HMF 之選擇性氧化反應。我們藉由 TEMPO 當反應媒介,成功轉化出產物 FDCA,在反應總載子數為 78 庫倫後,HMF 有 74%的轉化率,FFCA 與 FDCA 分別有 29%、30%的產率,40%、41%的選擇率,法拉第效率為 91%。而由濃度變化的計算,我們得出 HMF 為一級反應。;The photoelectrochemical (PEC) can directly utilize the photo-generatedelectron-hole pair in semiconductor electrode to catalyze the reaction like nature
    through photosynthesis. If the biomass is used as the reactant for selectiveoxidation to generate a product of high economic value, it will be anenvironmentally friendly and energy-saving process. We tried to develop a
    photoanode that absorbs visible light and applies it to the selective oxidation of 5-hydroxymethylfurfural (HMF). In this study, the BiVO4 thin film photoelectrode
    was first prepared by spin coating, and the performance of the photoelectrode was
    improved by coating a buffer layer, a protective layer, and a co-catalyst. The buffer
    layer improves the properties of the BiVO4 structure, making the grain moreuniform and complete. At 1.2 V vs. RHE, the photocurrent is increased by 33%,and the IPCE is increased from 16% to 34% at 400 nm. Loading of the NiOx cocatalyst improves the oxidation kinetics, shifting the oneset potential to thenegative side by 0.2 V vs. RHE of the water splitting reaction, but the current in
    the high-bias region is suppressed, indicating that there are also problems with theinterface and surface. The property of the protective layer TiO2 is similar to that
    of a transparent conductive oxide (TCO), which can effectively reduce the
    recombination of electron-hole pairs at the interface between the semiconductorand the electrolyte.
    After that, we selected the BiVO4/SnO2 photoelectrode with the highestphotocurrent properties to test the stability under different electrolytes and pH
    environments, and found that the borate buffer solution at pH=10 showed the best performance.
    By using TEMPO as the mediator, we have demonstrated a electrochemicaloxidation of HMF into FDCA. When 78 C was passed, HMF had a conversion
    rate of 74%, FFCA and FDCA had 29%, 30% yield, and 40%, 41% selectivity,Faraday efficiency is 91%. From the calculation of the concentration change, we
    conclude that HMF is a first order reaction.
    顯示於類別:[化學工程與材料工程研究所] 博碩士論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html0KbHTML157檢視/開啟


    在NCUIR中所有的資料項目都受到原著作權保護.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明