本研究以奈米球微影術及金屬輔助催化蝕刻法，成功地在(001)矽單晶基材上製備大面積準直排列之矽單晶奈米柱以及矽單晶奈米錐陣列，且在近紅外光波段有大幅提升光吸收之作用，可歸因於其底部仍有保留一層蜂巢狀的金薄膜。除此之外，更進一步製備正面為矽單晶奈米錐結構，背面為矽單晶金字塔結構的雙面微奈米結構。在元件的製程中，本實驗首先在含有金薄膜的矽晶奈米結構上開發具有優異近紅外光偵測性能之金/矽蕭基接面元件，並由TEM觀察在奈米結構上蒸鍍金的薄膜形貌，分別使用940 nm及1300 nm近紅外光光源照射金/矽單晶金字塔結構陣列、金/矽單晶奈米錐陣列以及金/雙面矽微奈米之蕭基光感測器，在零偏壓下量測其光響應度、偵測靈敏度及響應速度，且探討其單面粗糙化結構以及雙面粗糙化結構之元件的光轉換性質。;In this study, we successfully based on the nanosphere lithography and Au-assisted chemical etching process to fabricate large-area, vertically-aligned single crystalline silicon nanorod arrays (SiNRs) and silicon nanocone arrays (SiNCs) on (001) silicon substrate. The nanostructure exhibits high broadband absorption from visible to near-infrared (NIR) light range, and the large enhancement in NIR range can be attributed to honeycomb-like Au thin film remaining at the bottom of the SiNRs and SiNCs. In addition, we fabricate the micro/nano-structure that single crystalline SiNCs on the top-sized and pyramid structure at the rear. In the fabrication of the NIR photodetectors, we first develop Au/SiNCs Schottky junction on the Si substrate, and their morphologies are observed by TEM analysis. The produced Au/Si pyramid, Au/SiNCs and Au/SiNCs/pyramid Schottky junction NIR photodetectors are able to operate at zero external bias voltage and exhibit high responsivity, sensitivity and rapid response time to 940 nm and 1300 nm NIR light.
