在本研究中，我們報導在製備出一維奈米結構後，以濺鍍金屬鎳薄膜技術結合氫氟酸修飾與鹼性蝕刻之新穎製程，成功地在(001)矽單晶基材製備出大面積規則準直排列之錐狀鎳奈米管陣列結構，並藉由調控氫氟酸修飾次數與濕式蝕刻時間可以分別控制矽單晶奈米管的內外徑以及長度。此外，若奈米管之間排列較緊密，因靜電屏蔽效應而嚴重影響場發射性質，因此本實驗嘗試以相同製備手法製備出間距較大、不同尺寸之錐狀鎳奈米管陣列結構。由場發射性質量測結果顯示，在相同高度下，口徑小之錐狀鎳奈米管與口徑較大之鎳奈米管相比，可以發現其場增強因子從7784提升至8517，起始電場從0.83 V μm-1下降至0.77 V μm-1，大幅提升場發射的效應。 在高度方面隨著高度下降在口徑約相同之條件下，可以發現其場增強因子從8517降至4821，起始電場從0.77 V μm-1下降至0.99 V μm-1，因此可以判斷高度對於場發射來說影響重大。將上述製程結合熱退火處理，成功製備出錐狀鎳矽化物奈米管陣列結構。
;Abstract In this study, we reported the fabrication about one-dimensional nanostructure, a novel process successfully fabricates a large-area, well-ordered of tapered nickel nanotube structure on (001) silicon substrate, which combining hydrofluoric acid modification and alkaline etching process, and the internal diameter and length of nickel nanotubes can be controlled by hydrofluoric acid modification and the wet etching time. In addition, if the nanotubes are crowded, the field emission properties are seriously affected by the screening effect. Therefore, this study attempts to fabricate the tapered nickel nanotube arrays of different sizes with the same method. Field emission measurement’s result show that at the same height, the small diameter tapered nickel nanotube compared with larger one shows that the field enhancement factor has been increased from 7784 to 8517, and turn-on field was reduced from 0.83 Vμm. -1 dropped to 0.77 Vμm-1, significantly enhancing the effect of field emission. Under the condition that the aperture is the same, when the height decreased the field enhancement factor shifts from 8517 to 4821, and the initial incidence drops from 0.77 Vμm-1 to 0.99 Vμm-1. Combining the above process with thermal annealing treatment, also successfully fabricated a tapered nickel silicide nanotube arrays.
