本實驗主要是透過先冷壓再用高溫退火的方式製作Mg2SiSn熱電塊材，找到有最佳熱電優值係數(ZT)的最佳參數。在粉末的準備上是先使用不同的退火方式並調整不同的比例來製作Mg2Si與Mg2Sn粉末，之後再來合成P-TYPE與N-TYPE的Mg2SiSn塊材，並以所得的最佳塊材製作模組，以驗證其材料熱電轉換的功率。 ;The thermoelectric effect has been more and more important in our life, such as heat dissipation in IC chips and the global greenhouse effect. For these issues, the research of thermoelectric materials has become an important topic.
This study is focused on the formation of Mg2SiSn thermoelectric materials by cold pressing and high temperature annealing processes to investigate the process control for the thermoelectric figure of merit (ZT). Different annealing methods and stoichiometric ratios were employed to synthesize the Mg2Si and Mg2Sn powders, which were used to synthesize the p- and n-type Mg2SiSn alloys and the module as well. Module performance was measured to study the thermoelectric conversion efficiency.
