線性度改善之微波及毫米波二極體切換器與混波器之研製;Design of Microwave/Millimeter-Wave Diode Switch and Mixer for Improving Linearity

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题名:	線性度改善之微波及毫米波二極體切換器與混波器之研製;Design of Microwave/Millimeter-Wave Diode Switch and Mixer for Improving Linearity
作者:	王詠樂;Wang, Yong-Le
贡献者:	電機工程學系
关键词:	切換器;混頻器;CMOS;PIN二極體;線性度;Switch;Mixer;CMOS;PIN-Diode;Linearity
日期:	2020-08-18
上传时间:	2020-09-02 18:30:42 (UTC+8)
出版者:	國立中央大學
摘要:	本論文主要為設計收發機前端之二極體切換器及功率放大器線性度改善系統之降頻器。切換器是射頻收發機前端重要的電路，控制訊號接收與發射，並針對二極體切換器線性度改善。混波器為功率放大器線性度改善系統的前端子電路，由於現代通訊發展迅速，第五代動通訊頻率越來越高頻，越高頻傳輸速度越快，損耗也越大。其功率放大器的線性度極為重要，所以提出此方式來提高功率放大器線性度。第一章為論文的緒論。第二章首先使用Broadcom Limited公司製造之二極體實作於印刷電路板，電路包含串並式單刀單擲切換器、串聯串並式單刀單擲切換器、並聯串並式單刀單擲切換器。根據三種不同串並式單刀單擲切換器架構，可以觀察到串聯與並聯二極體，對於切換器插入損耗、隔離度、線性度的影響。切換器的線性度會因為輸入功率過高，導致二極體導通、線性度降低，根據其狀況提出反接式單刀單擲切換器，利用給予直流偏壓方式，有效抑制二極體導通。最後為使用1/4波長傳輸線設計單刀雙擲切換器，切換器為關閉狀態時，利用給予負偏壓方式可以有效抑制二極體導通，增加切換器線性度。第三章則延續第二章，使用穩懋PIN-HEMT製程設計，電路包含反接串並式單刀單擲切換及使用1/4波長傳輸線設計單刀雙擲切換器，將其第二章驗證結果應用於晶片設計，根據模擬結果可以觀察出反接式與負偏壓方式，皆可有效改善線性度。第四章為應用於功率放大器線性度改善系統之降頻器電路，使用台積電 65 nm CMOS製程與0.18 μm CMOS製程設計一個S頻段降頻器，分別使用電流注入與主動負載方式提高轉換增益所需的負載。其降頻器需要將射頻輸入功率及本地振盪功率同時輸入，所以在本地振盪輸入端加上反相器，降低本地振盪輸入功率。最後於第五章總結本篇論文所提出之電路與未來研究方向。 ;In this thesis, a front-end diode switch and power amplifier analog linearized front-end circuit mixer. The switch is an important circuit in the front end of the RF transceiver, which controls signal reception and transmission, and improves and applies the linearity of the diode switch. The mixer is an analog linearized front terminal circuit of the power amplifier. Due to the rapid development of modern communication, the frequency of the fifth-generation dynamic communication is getting higher and higher. The higher the frequency, the faster the transmission speed and the greater the loss. The linearity of the power amplifier is extremely important, so this method is proposed to improve the linearity of the power amplifier. The first chapter is the introduction of the thesis. The second chapter first uses diodes manufactured by Broadcom Limited to implement on the printed circuit board. The circuit includes series-shunt SPST switch, serial series-shunt SPST switch, parallel series-shunt SPST switch. According to three different series-shunt SPST switch architectures, the effects of series and parallel diodes on the insertion loss, isolation, and linearity of the switch can be observed. The linearity of the switch will cause the diode to be turned on and the linearity will be reduced due to the high input power. According to the situation, a reverse-connected SPST switch is proposed. The DC bias method is used to effectively suppress the diode conduction. Finally, a SPDT switch is designed to use the 1/4λ transmission line. When the switch is off, the negative bias can be used to effectively suppress the diode conduction and increase the linearity of the switch. The third chapter continues the second chapter, using the WIN PIN-HEMT process design, the circuit includes reverse SPST switching and the use of 1/4λ transmission line design SPDT switch, the verification results of the second chapter used in chip design, according to the simulation results, it can be observed that the reverse connection type and the negative bias method can effectively improve the linearity. Chapter 4 is a front-end mixer circuit applied to analog linearization circuits of power amplifiers. Using TSMC 65 nm CMOS process and 0.18 μm CMOS process to design an S-band mixer, which uses current injection and active load to improve conversion, the load required for conversion gain. The mixer needs to input the RF input power and the local oscillation power at the same time, so we added an inverter to the local oscillation input to reduce the local oscillation input power. Finally, the conclusions and future works are addressed in Chapter 5.
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