氮化鋁是一種寬能隙(6.2 ev)半導體材料，氮化鋁本身擁有良好的導熱性質，廣泛運用在發光二極體材料。在氮化鋁晶體製程中，被廣大使用的方法為物理氣相傳輸(Physical Vapor Transport , PVT)，利用昇華方式，將氮化鋁粉末昇華成鋁氣體和氮氣，透過飽和蒸汽壓的壓差當作氣體的傳輸動力。為了要達到業界需求品質，氮化鋁的高品質結構至關重要，影響品質最大關鍵為生長溫度分佈。 在絕大多數實驗文獻中，均以實際生長實驗做研究，較少使用數值分析模擬作此相關研究，因此本研究利用修改長晶爐體幾何結構，包含絕熱層厚度、坩堝上蓋厚度及調整線圈位置等，來研究在這些因素對生長溫度分布的影響。 研究結果顯示，當加厚坩堝上蓋且維持進氣口之氣體空間時，晶種載台因為熱阻變大，使得熱變得更均勻且不易散失；當加厚絕緣層時，因為絕緣層熱阻較大，加厚可以使得熱更不易散失並提升整體的生長溫度；在調整線圈位置時，因感應加熱在磁通密度高區域擁有較大的熱源，而線圈中心擁有最大的磁通密度，因此可利用此方式控制實驗中需要被加熱的坩堝區域，獲得良好的生長溫度環境。 ;Aluminum nitride is a wide band gap (6.2 ev) semiconductor material. Aluminum nitride is high thermal conductivity and widely used in light-emitting diode materials. In the process of aluminum nitride crystals, the Physical Vapor Transport (PVT) method is commercially used. The sublimation is used to sublimate the aluminum nitride powder into aluminum gas and nitrogen, and then it is transported by the difference of saturated vapor pressure. In order to achieve the quality required by the industry, the high-quality structure of aluminum nitride is crucial, and the most important factor affecting the quality is the growth temperature distribution. The experiment is widely used in the previous researches, but the numerical simulation rarely used. Therefore, the crystal growth furnace including the insulation layer thickness, crucible lid thickness, and coil position, etc., is modified to study the influence of these factors on the growth temperature distribution. The results show that when the crucible lid is thicker and the top space of the air inlet is maintained, the temperature gradient of seed becomes more uniform and difficult to dissipate because of the increased thermal resistance. When the insulation layer is thicker and high resistance, it will lead the temperature more uniform and high degree. When changing the position of the coil, the high magnetic flux position will lead a high heat source, and the center of the coil is the largest part. We can control the temperature field in the certain area of the crucible by this way.
