溶液剪切力 法製備?型?吩並異靛藍 (DTPQ) N型小分子 半 導體於有機場效應電晶 體 應用;Solution-Sheared Thienoisoindigo based Quinoidal (DTPQ) N-Type Small Molecular Semiconductors for Organic Field Effect Transistor Application

NCU Institutional Repository > 工學院 > 化學工程與材料工程研究所 > 博碩士論文 > Item 987654321/84883

請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/84883

題名:	溶液剪切力法製備?型?吩並異靛藍 (DTPQ) N型小分子半導體於有機場效應電晶體應用;Solution-Sheared Thienoisoindigo based Quinoidal (DTPQ) N-Type Small Molecular Semiconductors for Organic Field Effect Transistor Application
作者:	游芷欣;Yu, Chih-Hsin
貢獻者:	化學工程與材料工程學系
關鍵詞:	有機場效應電晶體;OFET
日期:	2020-10-12
上傳時間:	2021-03-18 16:44:13 (UTC+8)
出版者:	國立中央大學
摘要:	此論文以?型為結構之 n型小分子作為有機半導體材料，利用溶液製程中的剪切力塗布法製作出高結晶性與單一方向性之有機場效應電晶體。一系列以?吩並異靛藍 (thieno-isoindigo) 為核心的?型 (quinoidal) n型小分子 DTPQ 發展出具有直鏈 (DTPQ-10）和不同支點位置 DTPQ-b8，，-b16，，-b17）的四種材料，並對有機場效應電晶體中薄膜微結構、分子堆疊排列和電荷傳輸之間的關係進行了系統的研究。改變側鏈長度與支點位置對於分子堆疊、結晶性和元件性能產生的影響，利用紫外光 -可見光光譜儀、光學顯微鏡、原子力顯微鏡和低掠角廣角 X光繞射分析。 DTPQ-b16支點距離主鏈兩個碳與較長支鏈長度，由於高結晶性、晶粒大且分子排列具有單一方向性有利於電荷傳輸因此得到最高電子遷移率為 2.54 cm2 V-1 s-1、電流開關也比超過 105。相反的， DTPQ-b8支點距離主鏈兩個碳與較短支鏈長度，顯示較差溶解度不利於層層堆疊，得到電子遷移率為 0.72 cm2 V-1 s-1。 DTPQ-b17支點距離主鏈三個碳，於薄膜形貌上出現明顯裂痕，不利於電荷傳輸，得到電子遷移率為 0.192 cm2 V-1 s-1。直鏈的 DTPQ-10，也有較差溶解度，且分子呈現面朝上 (face-on)的排列與較差的薄膜形貌，得到最低電子遷移率為 0.013 cm2 V-1 s-1。同時DTPQ系列存放於控制濕度30~40%的大氣環境下超過一個月，並維持良好的空氣穩定度。;A specific design for solution-sheared organic semiconductors would be an effective approach to achieve high performance of organic field effect transistor (OFET) with high crystallinity and uniaxial alignment. Based on a series of thieno-isoindigo based quinoidal n-type small molecules DTPQ with alkyl-chain lengths (DTPQ-10) and different branching positions (DTPQ-b8, -b16, -b17) were developed. The effect of the length and branching position of alkyl chains on charge transport, molecular packing and crystallinity are investigated by UV-vis spectroscopy, atomic force microscopy (AFM), grazing incidence wide angle X-ray diffraction (GIWAXD). DTPQ-b16 with branching point at two position away the backbone with longer branch length, results in high crystallinity, larger grain size and well orientation exhibit the maximum electron mobility (μe) up to 2.54 cm2 V-1 s-1, ON/OFF ratio (ION /IOFF) over than 105. In contrast, DTPQ-b8 with branching point at two position away the backbone with shorter branch length, results in poor solubility, which is disadvantage to build the lamella stacking structure, and lead to an electron mobility of 0.72 cm2 V-1 s-1. DTPQ-b17 with branching point at third position away the backbone showed obvious crack on film morphology, which are highly disadvantage to charge transport, and an electron mobilities reaching 0.192 cm2 V-1 s-1. Last, DTPQ-10 with linear alkyl chain results in poor solubility with face-on molecular packing and bad morphology exhibit the lowest electron mobility of 0.013 cm2 V-1 s-1. Especially, these four DTPQs OFETs show excellent air stability, where the devices were stored in ambient condition (room temperature; relative humidity 30~40%) for over one month.
顯示於類別:	[化學工程與材料工程研究所] 博碩士論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	136	檢視/開啟

在NCUIR中所有的資料項目都受到原著作權保護.

社群 sharing

資料載入中.....