| 摘要: | 本論文研究整合無機氧化鋅電晶體和有機發光二極體(OLED)，製作高效
率之垂直發光電晶體。氧化鋅電晶體為上接觸/下閘極之結構，依序以透明
導電膜(ITO)為閘極，接著使用原子層沉積製作三氧化二鋁和氧化鉿作為高
介電係數之雙介電層以及 N 型氧化鋅半導體層，接著以光學微影的方式，
利用 LOR 及光阻的雙層結構，鍍製絕緣層氧化矽包覆銀源極來抑制關狀態
電流，最後在氧化鋅電晶體上方堆疊OLED，OLED 陽極即為垂直電晶體之
上汲極。本論文研究兩種 OLED 以驗證可堆疊在垂直電晶體之有機材料廣
泛性，分別為旋轉塗佈高分子 Super Yellow 製作黃光 OLED 和蒸鍍磷光分
子 Ir(ppy)3 之綠光 OLED。本論文也以Super Yellow 發光電晶體為架構探討
梳狀源極設計對電晶體表現的影響，藉此找出源極的優化參數。將優化的垂
直發光電晶體與標準 OLED 進行比較，發現在驅動電壓、電流密度、發光
強度與效率上非常接近，證明將 OLED 整合在氧化鋅電晶體上不會降低元
件表現。整體而言，兩種發光電晶體皆具備低驅動電壓(<3V)、高開口率
(>90%)、高電流密度(50-100 mA/cm2)、和高電流開/關比(104)。此外，電晶
體發光區域與氧化鋅圖樣高度對應，且發光均勻，顯示大量電子在高導電度
的氧化鋅電晶體中可橫向傳導數百微米的距離再向上注入至 OLED，因此
發光面積可透過光學微影氧化鋅圖樣來準確定義。;This thesis studies the integration of inorganic zinc oxide transistors and
organic light-emitting diodes (OLED) to produce high-efficiency vertical light-
emitting transistors. The zinc oxide transistor is a top-contact/bottom-gate
structure, and transparent conductive film (ITO) is used as gate in sequence, and
then aluminum oxide and hafnium oxide are deposited by atomic layer
deposition(ALD) as a double dielectric layer with high dielectric constant and N-
type zinc oxide semiconductor layer, and then using the double-layer structure of
LOR and photoresist by photolithography, the insulating layer is coated with
silicon oxide to cover the silver source to suppress the off-state current, and finally
on the zinc oxide transistor stacked OLED, the anode of OLED is the drain above
the vertical transistor. This thesis studies two OLEDs to verify the versatility of
organic materials that can be stacked on vertical transistors which are spin-coated
polymer Super Yellow to produce yellow light OLED and vapor-deposit
phosphorescent molecules Ir(ppy)3 green light OLED. This thesis also uses the
Super Yellow light-emitting transistor as the framework to explore the influence
of designed comb-shaped source on the performance of the transistor to find the
optimal parameters of the source. Comparing the optimized vertical light-emitting
transistor with the standard OLED, it is found that the driving voltage, current
density, luminous intensity and efficiency are very close, which proves that the
integration of OLED on the zinc oxide transistor will not reduce the component
performance. Overal, both light-emitting transistors have low driving voltage
(<3V), high aperture ratio (>90%), high current density (50-100 mA/cm2), and
high current on/off ratio (104) . In addition, the light-emitting area of the transistor
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and the zinc oxide pattern are highly corresponding to each other, and the light is
uniform, showing that a large number of electrons can be conducted laterally in
the high-conductivity zinc oxide transistor for a distance of hundreds of microns
and then injected upwards into the OLED. Therefore, the luminous area can be
accurately defined through the zinc oxide pattern of optical lithography. |
