在本研究中，我們報導一種在室溫下透過聚苯乙烯奈米球微影術結合金屬輔助催化 蝕刻法與電化學蝕刻法的新穎製程技術，成功在(001)矽單晶基材上以一步驟、安全以及 低成本的方式製備出大面積規則準直之矽單晶奈米管陣列結構，透過調控聚苯乙烯奈米 球之尺寸與電化學蝕刻時間可以分別控制矽單晶奈米管的外徑以及長度，此外，藉由調 控不同氫氟酸濃度及電流密度大小，可進一步控制矽單晶奈米管的內徑大小。接著，利 用濺鍍沉積與高溫熱處理製備矽化物奈米管結構。經由 SEM、TEM 影像圖與其相對應之 電子選區繞射圖譜鑑定分析可得知所製備出之矽單晶奈米管及 NiSi2 奈米管結構具有高 度準直性且為單晶結構。 由於 NiSi2 奈米管的有序排列、中空結構、單晶結構及低有效功函數，具有低啟動 電場的優異電子場發射特性。實驗結果呈現出令人興奮的前景，可以發現其有效功函數 從 5 eV 大幅下降至 2.64 eV，啟動電場從 2.35 V μm-1 大幅提前至 1.15 V μm-1，大幅提 升場發射的效應。;In this work, one-dimensional silicon nanotubes are successfully fabricated on (001) silicon substrate through an innovative method combining polystyrene nanosphere lithography, anisotropic wet etching and metal assisted anodic etching processes. The novel approach demonstrates a cost-effective and simple method to fabricate the silicon nanotubes which can also be employed for broadband photodetector, solar energy and optoelectronic nanodevices. After successfully fabricating the silicon nanotube, we deposited the Ni film on silicon nanotubes by sputtering process combining with the annealing treatment to obtain Nickel silicide nanotubes. TEM and SAED analyses indicated that all the NiSi2 nanotubes were single crystalline and their axial orientations were parallel to the [100] direction. The field emission measurement results show that Nickel silicide nanotubes have lower turn-on field of 1.15 V/μm compared to silicon nanotubes in the same height and diameter due to its lower effective work function.
