深冷電化學銅矽鍵合之研究;Bonding of copper and silicon at -70°C by electrochemistry

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题名:	深冷電化學銅矽鍵合之研究;Bonding of copper and silicon at -70°C by electrochemistry
作者:	李仲恩;Li, Jhong-En
贡献者:	機械工程學系
关键词:	深冷處理;電化學;晶圓鍵合;銅矽鍵合;銅離子擴散;cryogenic treatment;electrochemistry;Wafer bonding process;Copper-silicon bonding;Cu ion diffusion
日期:	2021-06-17
上传时间:	2021-12-07 13:13:07 (UTC+8)
出版者:	國立中央大學
摘要:	本研究發現以低溫電化學方式，能夠進行銅與矽晶圓直接鍵合。透過低溫環境，降低溫度對擴散的影響，探討電場驅動擴散反應。晶圓鍵合技術一般需要極度光滑之試片表面與非常高溫的熱處理，本實驗發現以電化學法能夠產生直接鍵合，不須經過拋光與退火等程序，且其鍵合強度極高。研究中發現更勝於銅抗拉強度之鍵合，使二試片分離時部分銅片破裂並殘留於矽晶表面。除了表面鍵合外，本論文也將探討電場引導的擴散現象。一般而言，-70℃之環境下，上不可能出現明顯及快速的擴散現象，但實驗中僅以 30分鐘的實驗時間，產生了深達數微米的銅離子擴散現象。;Wafer bonding technology generally require high-temperature heat treatment or extremely smooth surface condition. However, in our recent research, a strong bonding phenomenon between copper and silicon wafer was discovered in a liquid-nitrogen submerged device, with aid from external electric field. Minimum surface roughness and high-temperature heat treatment are not required in such bonding technique. Furthermore, if the copper-silicon interface was separated by force, a thin layer of copper on silicon wafer can be visible to the naked eyes. Indicate the bonding strength is stronger than the tensile stress of copper, therefore leaving a thin layer after been split apart. In addition, this thesis will also discuss the abnormally rapid diffusion of positively charged copper ions in silicon crystal at -70℃. Generally, diffusion is extremely temperature sensitive. Yet in our bonding experiment, rapid diffusion of copper ions can be observed by SIMS. We suggest that external electric field can provide the kinetic energy, which is normally provided by temperature, to ions in order to surpass activation energy.
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