碳化矽光輔助化學處理之表面特性探討;Characterizations of Photon-assisted Chemically Treated Silicon Carbide Surface

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题名:	碳化矽光輔助化學處理之表面特性探討;Characterizations of Photon-assisted Chemically Treated Silicon Carbide Surface
作者:	陳珮瑜;Chen, Pei-Yu
贡献者:	能源工程研究所
关键词:	半導體材料;矽晶圓;碳化矽晶圓;碳化矽研磨;光輔助化學處理;機械研磨;Semiconductor materials;Silicon wafer;Silicon carbide wafer;Silicon carbide wafer grinding;Photon-assisted chemically processing (PACP);Mechanical grinding
日期:	2022-09-28
上传时间:	2022-10-04 11:35:20 (UTC+8)
出版者:	國立中央大學
摘要:	本研究探討光輔助化學處理(Photon-assisted Chemical Processing, PACP)對半導體表面特性之影響，以矽晶圓與碳化矽晶圓為主要研究對象。其中碳化矽晶圓為目前第三代半導體主要材料，其高穩定性、高硬度、寬能隙及低熱膨脹率的特性為高功率、高頻元件所需。商用之碳化矽晶圓需經由長晶成晶柱後，通過線鋸切片、研磨與拋光等繁瑣、耗時之過程。但也由於其極高的硬度加上高化學穩定性，採用現有研磨拋光技術，加工速率緩慢，需耗費大量時間與耗材，成本極高，致使晶圓價格居高不下。本研究探討經PACP後之碳化矽表面探性。實驗結果顯示，此處理可在碳化矽表面創造一均勻且軟化的改質層，相較於未處理之碳化矽表面，其硬度降低了40%。在研磨特性方面，我們使用砂紙進行機械式研磨，可在數十分鐘內達奈米級之表面粗糙度。對於碳化矽之晶圓研磨，此法應有高效率及降低成本之效益。;This study investigates the effect of a proposed surface treatment, named Photon-assisted Chemical Processing (PACP), on the surface properties of semiconductors, mainly silicon and silicon carbide wafers. Among them, the silicon carbide wafer is the key component for third-generation semiconductor manufacturing because its high stability, high hardness, wide energy gap, and low thermal expansion coefficient are required for high-power and high-frequency devices. Commercial silicon carbide wafers go through a tedious and time-consuming process of wire saw slicing, grinding, and polishing after the crystals are grown into columns. However, due to its extremely high hardness and extremely high chemical stability, using the existing grinding and polishing technology, the processing speed is slow, the time-consuming consumables are many, and the cost is extremely high, resulting in the high wafer price. However, due to its extremely high hardness and high chemical stability, using the existing grinding and polishing technology, the processing speed is slow, the time-consuming consumables are many, and resulting in the high wafer price. This study investigated the surface properties of silicon carbide after the PACP. Experimental results show that this treatment could generate a uniform and softened modified layer, with thickness up to several tens of micrometer, on the wafer surface. Compared to the untreated surface, the hardness was reduced by 40%. In terms of grinding characteristics, we used sandpaper for mechanical grinding, which could reach nanometer-level surface roughness within several tens of minutes. For silicon carbide wafer grinding, this method should be efficient and cost-effective.
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