English  |  正體中文  |  简体中文  |  Items with full text/Total items : 66984/66984 (100%)
Visitors : 22922098      Online Users : 96
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/8978


    Title: 金屬-半導體-金屬光偵測器的特性;Characteristics of MSM Photodetectors
    Authors: 廖俊豪;Jing-Hau Lai
    Contributors: 電機工程研究所
    Keywords: 光偵測器;MSM;photodetector
    Date: 2000-06-19
    Issue Date: 2009-09-22 11:38:44 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 由於光纖通訊的蓬勃發展,使得光接收器的需求大增,過去大部分的光接收器都是採用三五族半導體材料,但此材料在矽質光電積體電路製程整合上頗困難,若能以目前產業主流的矽材質製作,則此整合性的問題即可迎刃而解。 本論文探討含非晶矽化鍺氫梯度結構薄膜的金屬-半導體-金屬光偵測器特性。藉調整梯度結構層沉積的時間與溫度及利用氫氣退火等研究所製作的各種金屬-半導體-金屬光偵測器的交、直流特性。再者,利用自動對準製程完成溝渠式電極光偵測器並探討其特性。最後,利用金屬-半導體-金屬光偵測器的結構研發出低操作電壓之大工作面積光偵測器,以利實際運用的探討。 In this thesis, first, the metal-semiconductor-metal photodetectors (MSM-PDs) with a graded hydrogenated intrinsic amorphous silicon-germanium (i-a-Si1-xGex:H) film deposited on [100] n-type silicon wafer, and the Cr top-electrodes have been studied. The effects of elapsed-time during growing graded i-a-Si1-xGex:H layer, substrate temperature and H2-annealing on device characteristics were compared and discussed. Then, the fabrication process and characteristics of the MSM-PDs with self-aligned trench-electrodes were investigated. Their obtainable characteristics were nearly the same as those of a conventional MSM-PD with trench-electrodes, which needed an additional mask. Finally, instead of i-a-Si1-xGex:H film, the i-a-Si:H film was used and deposited on Si wafer to form MSM-PDs with large active-area. The effects of resistivity of Si wafer on device performances were also discussed. The device linearity, knee voltage, and dark current were studied.
    Appears in Collections:[電機工程研究所] 博碩士論文

    Files in This Item:

    File SizeFormat
    0KbUnknown658View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明