ZnO/Metal/ZnO透明導電膜光電性質最佳化及其在可撓式透明電極中的應用;Optimization of the Optoelectronic Properties of ZnO/Metal/ZnO Transparent Conductive Films and The Application in Flexible Transparent Electrodes.

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Title:	ZnO/Metal/ZnO透明導電膜光電性質最佳化及其在可撓式透明電極中的應用;Optimization of the Optoelectronic Properties of ZnO/Metal/ZnO Transparent Conductive Films and The Application in Flexible Transparent Electrodes.
Authors:	李寶真;Li, Bao-Jhen
Contributors:	化學工程與材料工程學系
Keywords:	三明治夾層;奈撓曲;光電性質;導納法;模擬;撓曲測試;ZnO/Metal/ZnO;Flexible;Optoelectronic Properties;admittance method;simulation;Bending test
Date:	2023-03-22
Issue Date:	2023-05-09 17:21:24 (UTC+8)
Publisher:	國立中央大學
Abstract:	ZnO是一種氧化物層結構，在柔性器件中取代 ITO的前景非常有潛力，因為它比 ITO更具柔韌性。為了增強結構的透明度和導電性，不同的金屬材料被夾在頂部和底部的 ZnO層之間。使用電阻抗方法，通過確定最佳的金屬層和 ZnO層厚度以實現最大透明度。發現 Ag、 Au和 Cu是表現最好的材料，它們的體積導電率超過其他材料，使它們成為增強器件光電特性的絕佳候選材料。為了研究電氣特性，使用了掺雜高價數金屬或使用高導電 Ag等方法。還探討了層間結構對薄膜整體光電和柔韌性能的影響，其中 ZnO/V/ZnO多層結構主要關注電性，例如電阻率、載流子濃度和遷移率。在 300℃的退火後 ZnO/V/ZnO多層結構表現出最低的 3.82×10-3 Ω-cm電阻率和最高的 18 cm2/V-s遷移率，這歸功於 ZnO/ZnVxOy界面處的潛在勢能井。研究表明， ZnO/ZnVxOy異質結合處的潛在勢能井會產生 2DEG（二維電子氣體）效應，極大地增強了遷移率。相比之下， ZnO/Ag/ZnO多層結構主要研究光學特性。使用電阻抗方法確定了光傳輸的最佳結構，結果在濺射後，得到了 ZnO(45nm)/Ag(7nm)/ZnO(45nm)的膜厚，在可見光區域的平均透射率為 93.62 %。此外，透明度還受到納米級間隙層的表面形貌、厚度、折射率 (n)、消光係數 (k)和晶體結構的影響。綜合考慮這些因素可以解釋在納米尺度下實際塗層情況下的高透明度成因。;ZnO, an oxide layer structure in OMO, has emerged as a promising candidate for replacing ITO in flexible devices due to its superior flexibility. To enhance the transparency and conductivity of the structure, various metal materials were sandwiched between the top and bottom ZnO layers. Using the admittance method, the optimal metal layer and ZnO layer thickness were determined for maximum transparency. Ag, Au, and Cu were found to be the top performers, with their bulk conductivity surpassing that of other materials, making them attractive choices for enhancing the optoelectronic properties of the device. To investigate electrical properties, methods such as doping with high valence number metals or using highly conductive Ag were employed. The impact of the interlayer structure on the overall optoelectronic and flexibility properties of the film was also explored, with the ZnO/V/ZnO multilayer structure mainly focusing on electrical properties such as resistivity, carrier concentration, and mobility. After annealing at 300˚C, the ZnO/V/ZnO multilayer structure exhibited the lowest resistivity of 3.82×10-3 Ω-cm and the highest mobility of 18 cm2/V-s, thanks to the potential well at the ZnO/ZnVxOy interface. Studies show that the potential well at the ZnO/ZnVxOy heterojunction leads to a 2DEG (two-dimensional electron gas) effect, which greatly enhances mobility. In contrast, the ZnO/Ag/ZnO multilayer structure mainly investigated the optical properties. The admittance method was used to determine the optimal structure for light transmission, resulting in a film thickness of ZnO (45nm)/Ag (7nm)/ZnO (45nm) with an average transmittance of 93.62% in the visible light region after sputtering. Additionally, the transparency was affected by the surface morphology, thickness, refractive index (n), extinction coefficient (k), and crystal structure of the nanoscale interlayer. Taken together, these factors can account for the variations in transparency observed in real coating situations at the nanoscale.
Appears in Collections:	[National Central University Department of Chemical & Materials Engineering] Electronic Thesis & Dissertation

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