English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 64745/64745 (100%)
造訪人次 : 20475695      線上人數 : 351
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋

    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/9103

    題名: 具自行對準凹陷電極1x4矽質金屬-半導體-金屬光偵測器陣列的特性;Characteristics of 1x4 Si MSM-PD Array With Self-Aligned Trench Electrodes
    作者: 賴威任;Wei-Jen Lai
    貢獻者: 電機工程研究所
    關鍵詞: 光偵測器;陣列;矽質;非晶矽;自行對準;凹陷電極;MSM;photodetector;array;self-aligned;trench electrodes;amorphous Si
    日期: 2001-07-05
    上傳時間: 2009-09-22 11:41:09 (UTC+8)
    出版者: 國立中央大學圖書館
    摘要: 由於光纖通訊的蓬勃發展,光偵測器的需求量大增。過去大部分的光接收器皆採用三五族半導體材料,但此材料與矽質光電積體電路在製程整合上頗困難,若能以目前產業主流的矽材質製作光偵測器,則此整合性的問題即可迎刃而解。 本論文的主題是利用自動對準製程製作具凹陷電極及非晶矽氫薄膜的一列四行金屬-半導體-金屬光偵測器陣列,並且探討其交、直流特性及各頻道間的交越失真,以利光偵測器的實際運用。 In this thesis, the 1x4 Si metal-semiconductor-metal photodetector (MSM-PD) array with self-aligned trench-electrodes had been fabricated on a [100] p-type silicon wafer successfully. Self-alignment technique was used to reduce the needed mask levels and form a better alignment between metal and amorphous Si films. The obtained device had the higher responsivity and faster response speed than those of conventional planar Si MSM-PDs with non-self-aligned trench-electrodes. The responsivity of the device with self-aligned trench-electrodes was 0.30 A/W, which was higher than that (0.15 A/W) of the conventional planar one having no trench. The device knee voltage was decreased from 5 V to less than 1 V by using self-aligned trench-electrodes, and the FWHM (full width at half maximum) of temporal response was reduced from 66.6 ps to 56.0 ps. This would be due to the self-aligned trench-electrodes resulting in a more uniform lateral electric field in the light absorption region of device. Cross-talks among channels were not obvious because of the employed properly recessed isolation lanes. Different finger spacings and widths of interdigitated electrodes resulted in different responsivities of the MSM-PDs. The narrower the finger spacings and widths, the higher the device responsivity due to the larger device effective active area. The obtained 1x4 Si MSM-PD array with self-aligned trench-electrodes had good characteristics and could easily be integrated with Si OEIC (Opto-Electronic IC). It was expected that the MSM-PD array would be used in optical fiber communication system.
    顯示於類別:[電機工程研究所] 博碩士論文


    檔案 大小格式瀏覽次數


    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋  - 隱私權政策聲明