由於光纖通訊的蓬勃發展，光偵測器的需求量大增。過去大部分的光接收器皆採用三五族半導體材料，但此材料與矽質光電積體電路在製程整合上頗困難，若能以目前產業主流的矽材質製作光偵測器，則此整合性的問題即可迎刃而解。 本論文的主題是利用自動對準製程製作具凹陷電極及非晶矽氫薄膜的一列四行金屬-半導體-金屬光偵測器陣列，並且探討其交、直流特性及各頻道間的交越失真，以利光偵測器的實際運用。 In this thesis, the 1x4 Si metal-semiconductor-metal photodetector (MSM-PD) array with self-aligned trench-electrodes had been fabricated on a  p-type silicon wafer successfully. Self-alignment technique was used to reduce the needed mask levels and form a better alignment between metal and amorphous Si films. The obtained device had the higher responsivity and faster response speed than those of conventional planar Si MSM-PDs with non-self-aligned trench-electrodes. The responsivity of the device with self-aligned trench-electrodes was 0.30 A/W, which was higher than that (0.15 A/W) of the conventional planar one having no trench. The device knee voltage was decreased from 5 V to less than 1 V by using self-aligned trench-electrodes, and the FWHM (full width at half maximum) of temporal response was reduced from 66.6 ps to 56.0 ps. This would be due to the self-aligned trench-electrodes resulting in a more uniform lateral electric field in the light absorption region of device. Cross-talks among channels were not obvious because of the employed properly recessed isolation lanes. Different finger spacings and widths of interdigitated electrodes resulted in different responsivities of the MSM-PDs. The narrower the finger spacings and widths, the higher the device responsivity due to the larger device effective active area. The obtained 1x4 Si MSM-PD array with self-aligned trench-electrodes had good characteristics and could easily be integrated with Si OEIC (Opto-Electronic IC). It was expected that the MSM-PD array would be used in optical fiber communication system.