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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/9513


    Title: 應用於波長1.55 um光纖通訊前級接收放大器之設計與製作;+C2159 The design and fabrication of the 1.55 um optical communication receiver amplifier
    Authors: 林書民;Shu-Min Lin
    Contributors: 電機工程研究所
    Keywords: 轉阻放大器;光纖通訊;光偵測器;transimpedance amplifier;photodetector;optical communication
    Date: 2003-06-25
    Issue Date: 2009-09-22 11:49:24 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 本論文針對光纖通訊系統中前級接收端部分做相關之研究與製作,其包括應用於波長1.55 um之光偵測器以及轉阻放大器電路。 在光偵測器方面,提出一種新型雙模MSM/SSO光偵測器,利用一種結構同時製作出兩種光偵測器。首先利用TMA MEDICI二維元件模擬軟體比較MSM-mode與SSO-mode在直流及高頻脈衝響應上之特性表現,決定出此結構適合做為光偵測器元件,然後利用聯亞科技有機金屬化學氣相磊晶系統(MOCVD)成長出所要結構之晶圓,再使用微光電實驗室設備製作元件並利用本實驗室光電量測系統進行量測、分析元件之特性。 在轉阻放大器電路方面,主動元件選擇了通道摻雜電晶體。利用次微米之製程技術製作0.2 um T型閘極通道摻雜電晶體並使用本實驗室高頻微波量測系統進行元件之特性分析。最後利用此元件製作反向電壓放大器以及轉阻放大器電路,經由量測電路之特性,分析、討論並提出改善之方法。 The thesis focused on the front stage of the 1.55 um optical receiver in the fiber communication system. We proposed a novel dual mode MSM/SSO photodetector. The performance of the dual mode MSM/SSO photodetector was simulated and fabricated, simultaneously. The dc and high frequency response of the dual mode were compared. The 0.2 um T-gate Doped-Channel FET was fabricated and applied in the inverter and transimpedance amplifier circuits. The performance of the inverter and transimpedance amplifier were measured. We analyzed them and proposed the ways that improve the performance of the circuit.
    Appears in Collections:[電機工程研究所] 博碩士論文

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