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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/9547

    Title: 金屬矽化物薄膜與矽/矽鍺界面反應;之研究 The study of silicide on Si/Si1-XGeX interface
    Authors: 林詠祥;Yong-Xiang Lin
    Contributors: 電機工程研究所
    Keywords: 金屬矽化物;鈦矽化合物;鎳矽化合物;silicide;TiSi2;NiSi
    Date: 2004-01-07
    Issue Date: 2009-09-22 11:50:17 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 本篇論文的研究重點,在於如何製造出低阻值、表面平整的金屬矽化物,以便將來應用到金氧半電晶體元件的製作。 首先,我們簡介了一般形成金屬矽化物常用的金屬材料,其優缺點的敘述,這些金屬有鈦、鈷、鎳;而我們先將金屬鈦應用到在我們實際製作金氧半電晶體元件時,會遇到的矽基板條件,這包括P型與N型的矽基板,因此我們一開始的實驗,便是針對金屬鈦與未摻雜、P型與N型的矽基板,形成的鈦矽化合物在不同的快速熱回火溫度時的阻值分析、表面分析及鈦矽化合物薄膜的組成元素分析;接著便將此實驗流程應用到鎳矽化合物的製作,我們同樣比較了在矽基板但不同的摻雜情形時,在不同的快速熱回火溫度的阻值分析、表面分析;最後再將鎳矽化合物的製程應用到P型與N型的矽鍺基板,一樣是比較其阻值與表面的分析。 In this thesis, the focus is how to fabricate silicide with low resistance and smooth interface. The experimental results promise the potential of MOSFET application. First, we describe the common silicide about advantages and faults. In Ti-silicide, we use undoped、P-type and N-type Si-substrates. We analyze Ti-silicide resistance、interface and the element of composing in different RTA(raped thermal annealing) temperature and time. In Ni-silicide, we not only use undoped、P-type and N-type Si-substrates but also P-type and N-type SiGe-substrates. We analyze Ni-silicide resistance and interface in different RTA temperature and time in the same way.
    Appears in Collections:[電機工程研究所] 博碩士論文

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