應變型矽鍺金氧半電晶體之研製 摘 要 本論文中，吾人利用應變型Si/SiGe異質結構製作了平面式n型與p型金氧半電晶體元件，並探討其在不同閘極通道長度(4.7μm ~ 0.6μm)之電性表現。 由直流I-V特性可清楚得知，應變型矽鍺 pMOSFET元件無論在驅動電流、傳導係數 (gm) 及次臨界斜率皆比bulk Si元件有較佳之特性表現外，同時也展現了較佳的短通道特性上如靜態漏電流Ioff (約低1個數量級)、Ion/Ioff及VT roll off等，因此SiGe pMOSFET元件有極大之潛能運用於高速低功率之電路。 然而，應變型矽鍺nMOSFET元件則因inter valley scattering的影響，故無法如P型元件一般展現出較傳統Si nMOSFET元件更佳之驅動電流與元件速度﹔此外因結構設計未最佳化，導致漏電流過大而無法與bulk Si nMOSFET元件比較其次臨界以及短通道特性表現。 The fabrication of Si1-XGeX MOSFET Abstract We have investigated the nMOSFET and pMOSFET with strain Si1-xGex/ Si heterostructure channels formed. The experimental results promise the potential of SiGe heterostructure MOSFET in CMOS application. The incorporation of 20﹪Ge in the channel provides a drive current and transconductor enhancement and manifests advantage of short channel effect in pMOSFET. From measurement result in nMOSFET, the leakage was occurred and we can’t compare subthreshold region characteristic and short channel effects with bulk Si nMOSFET. The bulk Si nMOSFET drive current was better than the strained Si0.8Ge0.2, so it reduced strained Si0.8Ge02 nMOSFET and pMOSFET drive current difference and device structure become more comparable.
