極低溫下鰭式場效電晶體和平面場效電晶體之隨機摻雜凍結效應的實驗分析;Experimental Analysis of Dopant Freeze-out Effect on Cryogenic FinFETs and Planar CMOS Devices

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題名:	極低溫下鰭式場效電晶體和平面場效電晶體之隨機摻雜凍結效應的實驗分析;Experimental Analysis of Dopant Freeze-out Effect on Cryogenic FinFETs and Planar CMOS Devices
作者:	林睿耆;Lin, Rui-Qi
貢獻者:	電機工程學系
關鍵詞:	鰭式場效電晶體;平面場效電晶體;隨機摻雜擾動;極低溫
日期:	2024-07-18
上傳時間:	2024-10-09 17:07:09 (UTC+8)
出版者:	國立中央大學
摘要:	隨著科技進步，太空科技的發展和量子電腦的推出，使得量子元件的研究變得尤為重要。因此對這些元件的研究需求大幅增加。極低溫 (Cryogenic Temperature) 金屬氧化物半導體場效電晶體 (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET) 元件在廣泛的應用在量子電腦中，因為量子電腦主要運行在極低溫環境下。因此了解極低溫環境下的元件特性是發展量子電腦的重要課題之一。在元件持續微縮的過程中，它們依然會受到許多變異源的影響，從而導致電性變化。然而對於極低溫環境下這些影響元件電性的變異源的研究相當稀少。本研究針對十六奈米鰭式場效電晶體（Fin Field Effect Transistors, FinFETs）和三十六奈米平面場效電晶體（Planar Field Effect Transistors, Planar FETs）在極低溫下的製程變異源中的隨機摻雜擾動（Random Dopant Fluctuation, RDF）進行探討。首先通過基本的電性量測分析，了解低溫環境下的元件特性，接著通過大量量測獲得進行隨機摻雜擾動分析所需的數據，隨後進行離散摻雜劑分析（Discrete Dopant Profiling, DDP），觀察摻雜濃度分布，並分析隨機摻雜擾動的現象，最後分析隨機摻雜擾動影響的組成成分。從實驗結果來看在極低溫環境下的隨機摻雜擾動的現象是較為明顯的，並且是會影響到電晶體的特性，使Vth 產生擾動，進而影響到汲極電流。;With the advancement of technology, the development of space technology and the introduction of quantum computers have made the research of quantum components particularly important. Consequently, the demand for research on these components has significantly increased. Cryogenic temperature metal-oxide-semiconductor field-effect transistor (MOSFET) devices are widely used in quantum computers because they primarily operate in extremely low-temperature environments. Therefore, understanding the characteristics of components in cryogenic environments is a crucial topic for the development of quantum computers. During the continuous miniaturization of components, they are still affected by various sources of variation, leading to changes in electrical properties. However, research on the sources of variation that affects the electrical properties of components in cryogenic environments is relatively scarce. This study investigates the random dopant fluctuation (RDF) in 16nm FinFETs and 36nm Planar FETs under cryogenic conditions. First, basic electrical measurements are conducted to understand the characteristics of the components in low-temperature environments. Then, extensive measurements are performed to obtain the data required for the analysis of random dopant fluctuations. Subsequently, the discrete dopant profiling (DDP) is conducted to observe the distribution of dopant concentrations and analyze the phenomena of random dopant fluctuations. Finally, the components affected by random dopant fluctuations are analyzed. The experimental results indicate that the phenomenon of random dopant fluctuation in cryogenic environments is quite pronounced and affects the characteristics of transistors, causing threshold voltage (Vth) fluctuations and consequently impacting the drain current.
顯示於類別:	[電機工程研究所] 博碩士論文

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