本論文以III-V族半導體製程所製作的砷化鎵(GaAs)異質接面電晶體HBT(Heterojunction Bipolar Transistor)來設計與實現光纖通訊的相關電路，並提出設計方式、測試方法的流程；利用異質接面電晶體其高頻率、高速度及高驅動力等優點，來設計如光傳送雷射驅動器、光接收轉阻放大器、限制放大器等，完成傳送/接收端10 Gb/s傳輸率的模擬及製作。 論文並提出10 Gb/s標準下所需的量測架構與量測方法，使能正確地測量光電元件和相關電路的特性，以便於進一步的探討在高速率下所面臨的問題。 In this thesis, we design and realize the related circuits of fiber-optical communication using by GaAs HBT (Heterojunction Bipolar Transistor) from III-V semiconductor process. Moreover, it provides a process for designing and testing. To employ the strong point of HBT which have high frequency, high operation speed and high driving ability. According to these characteristics, we can simulate and complete circuits of 10 Gb/s transmitter and receiver easily. Such as Transimpedance amplifier, limiting amplifier and laser driver. In high speed transmission, some problems will be discovered and discussed. Therefore, understanding how to structure the measurement system and measure the correct characteristics of optical-electrical device needed.