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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/9720


    Title: 磷化銦異質接面雙極性電晶體元件製作與特性分析;Fabrication and Characteristic Analysis of InP Based Heterojunction Bipolar Transistors
    Authors: 王聖瑜;Sheng-Yu Wang
    Contributors: 電機工程研究所
    Keywords: 苯並環丁烯;磷化銦異質接面電晶體;電流密度;砷化鋁銦鎵;Current density;InAlGaAS;InP;HBT;BCB
    Date: 2004-07-05
    Issue Date: 2009-09-22 11:54:25 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 本論文主要研究內容在於磷化銦雙異質接面雙極性電晶體的製程技術發展與其高頻特性分析。在製程技術方面,我們利用利用剝離光阻(Lift Off Resist,以下簡稱LOR)改善苯並環丁烯(BCB)在曝光顯影後容易殘留的問題,發展出一套以苯並環丁烯曝光、顯影的方式,完成鈍化層披覆、平坦化、以及層與層之間之間隔層,並以此製程技術為基礎,發展出以一次金屬完成射極(Emitter)、基極(Base)、集極(Collector)的射頻元件快速製程,做為驗證磊晶結果的有效工具;此外,為了追求元件的高頻特性,本研究亦發展了一套小線寬製程,配合隔絕墊(isolation pad)的設計,以傳統接觸式光罩對準機,實現了射極面積1x10μm2的元件。 在元件特性分析方面,主要內容在於探討磷化銦雙異質接面電晶體的電流阻擋效應,在本論文中我們分別利用加入四元砷化鋁銦鎵材料及複合集極結構來降低電流阻擋效應,在本論文中將會討論鋁含量對於降低電流阻擋效應的的影響,以及在複合集極結構中,不同砷化銦鎵間隔層厚度對於元件高頻特性的影響,就射極面積為2x20μm2之元件,電流增益截止頻率(ft)可達126GHz,同時其崩潰電壓可達8.5伏特,不遜於前人所發表之成果。 This research is focus on Fabrication and Characteristic Analysis of InP Based Heterojunction Bipolar Transistors. First, we invent a new technique to prevent BCB remain on the contact window. By using this technique, we invent " Quick Process of HBT RF device" . In order to reduce current blocking effect, we use a composite collector structure to minimize the conduction band discontinuity. We demonstrate max current density above 200kA/cm2 and cutoff frequency about 120GHz. Final, In order to reduce the space charge time, we scale down our device to 1x10um2.
    Appears in Collections:[電機工程研究所] 博碩士論文

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