English  |  正體中文  |  简体中文  |  Items with full text/Total items : 75533/75533 (100%)
Visitors : 27247164      Online Users : 709
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/9726

    Title: 非晶質吸光區與累增區分離之類超晶格累崩光二極體;Amorphous Separated Absorption and Multiplication Superlattice-like Avalanche Photodiodes (Amorphous SAM-SAPD’s)
    Authors: 邱俊智;Chun-Chih Chiu
    Contributors: 電機工程研究所
    Keywords: 光偵測器;超晶格;雪崩;累增;累崩;非晶質;光二極體;amorphous;avalanche;SAM-APD;photodoide;multiplication
    Date: 2004-06-17
    Issue Date: 2009-09-22 11:54:34 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 摘 要 本論文的研究主題是探討及比較在非晶質類超晶格(superlattice-like)結構的累增區中,分別加入p-n (a-SiC)、p-i-n (a-SiC)或p-i(a-SiC)-i-n(a-Si)非晶質複層的各種非晶質吸光區累增區分離的類超晶格累崩光二極體(非晶質SAM-SAPD)的主要光電特性,例如:光/暗電流曲線,光增益,發射雜訊,及過剩雜訊因子等等。這些元件都有相當高的光增益,但其中以加入p-i(a-SiC)-i-n(a-Si)非晶質複層的元件具有最高的光增益與最低的過剩雜訊。這些實驗結果顯示提高累增區中的電場及利用適當的能隙帶不連續性可使元件具有較佳的光電特性。 Abstract In this study, several kinds of amorphous separated absorption and multiplication superlattice-like avalanche photodiode (amorphous SAM-SAPD), each with additional p-n (a-SiC), p-i-n (a-SiC), or p-i(a-SiC)-i-n(a-Si) amorphous silicon-alloy layers in substage of superlattice (SL) for multiplication, had been designed and fabricated successfully. Also their characteristics such as dark and photo I/V curves, optical gains, relative spectral responses, shot noises and excess noise factors had been systematically measured, calculated, and compared. All of these devices had rather high optical gain, and the device with the additional p-i(a-SiC)-i-n(a-Si) amorphous layers in substage of SL(named Device C) had the highest optical gain and the lowest excess noise. These results indicated that using high electric-field and proper band-edge discontinuity in the multiplication region of a SAM-SAPD could improve the device optical gain and excess noise simultaneously.
    Appears in Collections:[電機工程研究所] 博碩士論文

    Files in This Item:

    File SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明