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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/9886


    Title: 兆赫波輻射用-高速高功率分離式傳輸復合行波式光二極體;High Speed and High Power Separated-Transport-Recombaination Traveling-Wave Photodiode for the Application of THz Transmitter
    Authors: 許弘錢;Hung-Chien Hsu
    Contributors: 電機工程研究所
    Keywords: 行波式光二極體;高速/高功率光二極體;兆赫波發射器;Traveling-wave photodiode;THz transmitter;High speed / power photodiode
    Date: 2005-06-28
    Issue Date: 2009-09-22 11:58:57 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 在此論文中,我們提出了一新穎的分離式傳輸復合行波式光二極體,此光二極體不但可提升光二極體的輸出功率-頻寬雙重表現,更可解決傳統光二極體在設計上載子傳輸時間、本質電容以及飽和電流三者的抵觸關係。 在一般高速光二極體的表現上,通常的指標是追求頻寬與飽和電流的表現。但傳統的光二極體在高功率操作下,通常會因載子漂移累積等問題,產生一嚴重的空間電荷遮蔽效應,造成嚴重的頻寬限制與輸出功率衰退的缺點。 所以我們針對傳統光二極體所遭遇到的問題,提出了我們新穎的磊晶結構加以克服。在傳統光二極體的吸光層中,加入一部分的復合中心(低溫成長砷化鎵)與傳輸層(砷化鎵)做組合。如此一來和傳統光二極體相比,除了將可大大提高速度與輸出功率表現外,更也解決了傳統光二極體在設計上的抵觸問題。 此元件的成功,不僅可解決數位和類比光通訊領域中的光偵測器瓶頸與問題,更大大的可應用在一兆赫(毫米)波源發射器上的光電導元件,以提供作為一穩定的兆赫波源發射器。 We demonstrate a novel structure of p-i-n photodiode: Separated-Transport-Recombination photodiode, which can greatly release the trades-off between RC bandwidth limitation, responsivity, and output saturation power performance. By incorporating an epitaxial layer, which has short carrier lifetime (less than 1ps) to serve as the recombination center, with the intrinsic photo-absorption layers, this device exhibits superior speed and power performance to the control photodiode with pure intrinsic photo-absorption layer. Our demonstrated structure can also eliminate the bandwidth degradation problem of the high-speed photodetector, whose active photo-absorption layer is fully composed of materials with short lifetime (~1ps), under high dc bias voltages.
    Appears in Collections:[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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