本論文研究主要目的是開發出一個整合(Unified)結構的模擬環境，即是將我們原來的各種不同版本的元件模擬或電路模擬變成整合的版本，我們創造出一個零組件檔(comp.h)，將所有元件模擬和電路模擬有關的副函式都放進此零組件檔(comp.h)，主程式將變的更簡潔且對使用者而言除錯更容易，所有應用皆共用一個零組件檔，使得精確度較高。另外，我們發展出半導體方形元件(Square Element),方形元件包含由主導半導體的帕松方程式(Poisson’s Equation)及連續方程式(Continuity Equation)轉換成等效電路模型,使我們可以利用電路模擬來模擬半導體元件行為，且使得元件和外接電路之間能夠整合為一體。不同以往的差別是我們可以由主程式定義元件參數來呼叫方形元件執行二維半導體元件和其外接電路的混階(Mixed-Level)模擬應用。接下來我們利用小電阻接線技巧(Small-R Method)，來解決一些混階模擬應用的外接電路跳線問題，使得Band-Solver變為可行。另外我們併入MOSFET的電容效應，使MOSFET的電路模型更完整，最後模擬了一些振盪電路的設計與分析。 In order to have a simple and efficient simulation environment for user, we develop a unified program structure. That is to say, all of related functions which include circuit elements and square elements have been set in the component file (comp.h). We only need to include “comp.h” at the beginning of the main program when we get ready to work. The main program will become shorter, and main programs for different applications can share the same component file. Furthermore, we develop the device square element to execute application of mixed-level simulations of 2-D device with external circuit elements, and the square element can be defined and called by user. The principle of square element is to formulate Poisson’s and continuity equations into the equivalent-circuit model. Next, the small-r method will let band-solver become workable on the mixed-level simulations. Besides, the MOSFET capacitances for circuit model will be completed. In addition, we design some applications of oscillation circuits.
