氮砷化銦鎵雷射二極體成長與研製; Growth and fabrication of InGaAsN laser diode.

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/9901

Title:	氮砷化銦鎵雷射二極體成長與研製;Growth and fabrication of InGaAsN laser diode.
Authors:	邱培晉;Pei-Chin Chiu
Contributors:	電機工程研究所
Keywords:	氮砷化銦鎵;雷射;InGaAsN;Laser
Date:	2005-06-30
Issue Date:	2009-09-22 11:59:40 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	本論文針對利用有機金屬氣相磊晶法成長氮砷化銦鎵量子井做一系列的討論，包括磊晶參數的影響，以及改善量子井光學特性的方法，另外觀察釐清氮砷化銦鎵量子井成長在含鋁的磊晶層上光學特性會出現衰化的現象，主要是因為有機金屬氣相磊晶系統內的鋁殘留現象，以及氮和鋁之間的強鍵結所造成的，為了避免此一現象，本文提出二次成長和鈍化法兩種技術解決，尤其是鈍化法，對於量產具有極大的優點，利用這些方法，成功的解決此一問題，製作出1.262微米的氮砷化銦鎵量子井雷射。 The effects of two-step and nitride passivation growth of InGaAsN QW on AlGaAs/GaAs cladding layers have been studied. It is shown that both methods are effective on reducing Al-contamination and improving optical quality of InGaAsN QW. While lasers prepared by both methods exhibit almost the same characteristics, nitride passivation is preferred due to its simple process and short run-time, which are essential for mass production.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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