Improvement on Optical Properties of GaN Light-Emitting Diode With Mesh-Textured Sapphire Back Delineated by Laser Scriber

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题名:	Improvement on Optical Properties of GaN Light-Emitting Diode With Mesh-Textured Sapphire Back Delineated by Laser Scriber
作者:	Lee,KT;Lee,YC;Chang,JY;Gong,J
贡献者:	光電科學研究所
关键词:	PATTERNED SAPPHIRE;LIFT-OFF;OUTPUT;BLUE
日期:	2009
上传时间:	2010-06-29 19:41:46 (UTC+8)
出版者:	中央大學
摘要:	The optical properties of gallium nitride light-emitting diode with mesh-textured sapphire back delineated by laser scriber and subsequently coated with silver-copper layers were investigated. This new structure improves the optical characteristics. The electroluminescence and luminous intensities are 30% and 20% stronger than that without mesh-textured trench and silver-copper at 20 mA, respectively. The maximum luminous intensity has 1.6 times enhancement, which is mainly from higher light extraction by the mesh-textured trench.
關聯:	IEEE PHOTONICS TECHNOLOGY LETTERS
显示于类别:	[光電科學研究所] 期刊論文

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