Improvement on Optical Properties of GaN Light-Emitting Diode With Mesh-Textured Sapphire Back Delineated by Laser Scriber

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/28103

Title:	Improvement on Optical Properties of GaN Light-Emitting Diode With Mesh-Textured Sapphire Back Delineated by Laser Scriber
Authors:	Lee,KT;Lee,YC;Chang,JY;Gong,J
Contributors:	光電科學研究所
Keywords:	PATTERNED SAPPHIRE;LIFT-OFF;OUTPUT;BLUE
Date:	2009
Issue Date:	2010-06-29 19:41:46 (UTC+8)
Publisher:	中央大學
Abstract:	The optical properties of gallium nitride light-emitting diode with mesh-textured sapphire back delineated by laser scriber and subsequently coated with silver-copper layers were investigated. This new structure improves the optical characteristics. The electroluminescence and luminous intensities are 30% and 20% stronger than that without mesh-textured trench and silver-copper at 20 mA, respectively. The maximum luminous intensity has 1.6 times enhancement, which is mainly from higher light extraction by the mesh-textured trench.
Relation:	IEEE PHOTONICS TECHNOLOGY LETTERS
Appears in Collections:	[光電科學研究所] 期刊論文

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