Output power enhancement of light-emitting diodes via two-dimensional hole arrays generated by a monolayer of microspheres

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题名:	Output power enhancement of light-emitting diodes via two-dimensional hole arrays generated by a monolayer of microspheres
作者:	Hou,CH;Tseng,SZ;Chan,CH;Chen,TJ;Chien,HT;Hsiao,FL;Chiu,HK;Lee,CC;Tsai,YL;Chen,CC
贡献者:	光電科學研究所
关键词:	NITRIDE-BASED LEDS;TRANSPARENT CONTACT;PHOTONIC CRYSTAL;LAYER
日期:	2009
上传时间:	2010-06-29 19:42:10 (UTC+8)
出版者:	中央大學
摘要:	The output power enhancement of the GaN-based light-emitting diodes (LEDs) featuring two-dimensional (2D) hole arrays is demonstrated. The 2D air hole arrays were first generated in the photoresist by utilizing the focusing nature of microspheres, and then transferred onto the GaN surface through dry etching. The maximum output power of the surface-textured LEDs was enhanced by 45% compared with the LEDs without surface texturing. The finite-difference time-domain calculation was performed and revealed that the light extraction efficiency of the textured LEDs increased with increasing etching depth. (C) 2009 American Institute of Physics. [doi:10.1063/1.3238360]
關聯:	APPLIED PHYSICS LETTERS
显示于类别:	[光電科學研究所] 期刊論文

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