Output power enhancement of light-emitting diodes via two-dimensional hole arrays generated by a monolayer of microspheres

NCU Institutional Repository > 理學院 > 光電科學研究所 > 期刊論文 > Item 987654321/28128

請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/28128

題名:	Output power enhancement of light-emitting diodes via two-dimensional hole arrays generated by a monolayer of microspheres
作者:	Hou,CH;Tseng,SZ;Chan,CH;Chen,TJ;Chien,HT;Hsiao,FL;Chiu,HK;Lee,CC;Tsai,YL;Chen,CC
貢獻者:	光電科學研究所
關鍵詞:	NITRIDE-BASED LEDS;TRANSPARENT CONTACT;PHOTONIC CRYSTAL;LAYER
日期:	2009
上傳時間:	2010-06-29 19:42:10 (UTC+8)
出版者:	中央大學
摘要:	The output power enhancement of the GaN-based light-emitting diodes (LEDs) featuring two-dimensional (2D) hole arrays is demonstrated. The 2D air hole arrays were first generated in the photoresist by utilizing the focusing nature of microspheres, and then transferred onto the GaN surface through dry etching. The maximum output power of the surface-textured LEDs was enhanced by 45% compared with the LEDs without surface texturing. The finite-difference time-domain calculation was performed and revealed that the light extraction efficiency of the textured LEDs increased with increasing etching depth. (C) 2009 American Institute of Physics. [doi:10.1063/1.3238360]
關聯:	APPLIED PHYSICS LETTERS
顯示於類別:	[光電科學研究所] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	544	檢視/開啟

在NCUIR中所有的資料項目都受到原著作權保護.

社群 sharing