Role of excess As in low-temperature grown GaAs subjected to BCl3 reactive ion etching

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题名:	Role of excess As in low-temperature grown GaAs subjected to BCl3 reactive ion etching
作者:	Chang,MN;Chuo,CC;Lu,CM;Hsieh,KC;Yeh,NT;Chyi,JI
贡献者:	電機工程研究所
关键词:	MOLECULAR-BEAM EPITAXY;INDUCED DAMAGE;DEFECTS;ALGAAS/GAAS;LAYER
日期:	1999
上传时间:	2010-06-29 20:20:44 (UTC+8)
出版者:	中央大學
摘要:	The role of excess As in low-temperature (LT) grown Be doped, undoped and Si-doped GaAs subjected to BCl3/Ar reactive ion etching has been investigated using transmission electron microscopy and atomic force microscopy. Etching rate and the extent of ion damage are found to depend on the doping type and thermal treatment. For as-grown LT-GaAs, significant decrease in etching rate is observed as the dopant is changed from Be to Si. Thermal treatment by rapid thermal annealing slightly increases the etching rate of GaAs grown at low temperature while it increases the etching rate significantly for the samples grown at normal temperature. In addition, as-grown LT-GaAs also exhibits superior resistance to the ion damage of reactive ion etching. (C) 1999 American Institute of Physics. [S0003-6951(99)03345-8].
關聯:	APPLIED PHYSICS LETTERS
显示于类别:	[電機工程研究所] 期刊論文

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