Role of excess As in low-temperature grown GaAs subjected to BCl3 reactive ion etching

NCU Institutional Repository > 資訊電機學院 > 電機工程研究所 > 期刊論文 > Item 987654321/29280

請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/29280

題名:	Role of excess As in low-temperature grown GaAs subjected to BCl3 reactive ion etching
作者:	Chang,MN;Chuo,CC;Lu,CM;Hsieh,KC;Yeh,NT;Chyi,JI
貢獻者:	電機工程研究所
關鍵詞:	MOLECULAR-BEAM EPITAXY;INDUCED DAMAGE;DEFECTS;ALGAAS/GAAS;LAYER
日期:	1999
上傳時間:	2010-06-29 20:20:44 (UTC+8)
出版者:	中央大學
摘要:	The role of excess As in low-temperature (LT) grown Be doped, undoped and Si-doped GaAs subjected to BCl3/Ar reactive ion etching has been investigated using transmission electron microscopy and atomic force microscopy. Etching rate and the extent of ion damage are found to depend on the doping type and thermal treatment. For as-grown LT-GaAs, significant decrease in etching rate is observed as the dopant is changed from Be to Si. Thermal treatment by rapid thermal annealing slightly increases the etching rate of GaAs grown at low temperature while it increases the etching rate significantly for the samples grown at normal temperature. In addition, as-grown LT-GaAs also exhibits superior resistance to the ion damage of reactive ion etching. (C) 1999 American Institute of Physics. [S0003-6951(99)03345-8].
關聯:	APPLIED PHYSICS LETTERS
顯示於類別:	[電機工程研究所] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	537	檢視/開啟

在NCUIR中所有的資料項目都受到原著作權保護.

社群 sharing