A 30-GHz 10-dB low noise amplifier using standard 0.18-mu m simulated CMOS technology

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Title:	A 30-GHz 10-dB low noise amplifier using standard 0.18-mu m simulated CMOS technology
Authors:	Tu,Hsin-Lung;Yang,Tsung-Yu;Liang,Kung-Hao;Chiou,Hwann-Kaeo
Contributors:	電機工程研究所
Date:	2007
Issue Date:	2010-07-06 18:15:07 (UTC+8)
Publisher:	中央大學
Abstract:	A three-stage 30-GHz low noise amplifier (LNA) was designed and fabricated in a standard 0.18-mu m CMOS technology. The LNA has demonstrated a 10-dB gain and a minimum noise figure of 5.2 dB at 30 GHz. The achieved input 1-dB compression point (IP1 dB) an
Relation:	MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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