Improved Schottky leakage current of In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs using (NH4)(2)S-x treatment

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32196

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32196

Title:	Improved Schottky leakage current of In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs using (NH4)(2)S-x treatment
Authors:	Chiu,Hsien-Chin;Chang,Liann-Be;Huang,Yuan-Chang;Chen,Chung-Wen;Li,Yu-Jen;Chan,Yi-Jen
Contributors:	電機工程研究所
Keywords:	SULFUR PASSIVATION;HIGH-PERFORMANCE;GAAS;TRANSISTORS
Date:	2006
Issue Date:	2010-07-06 18:20:52 (UTC+8)
Publisher:	中央大學
Abstract:	Surface passivation process play an important role, especially in high-power In0.5Al0.5As/In0.5Ga0.5As metamorphic high-electron-mobility transistor (MHEMT) applications, and a passivation pretreatment technology has been proposed in this study. Before th
Relation:	ELECTROCHEMICAL AND SOLID STATE LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	461	View/Open

社群 sharing