1.3 mu m InAs/GaAs quantum dots directly capped with GaAs grown by metal-organic chemical vapor deposition

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32375

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32375

Title:	1.3 mu m InAs/GaAs quantum dots directly capped with GaAs grown by metal-organic chemical vapor deposition
Authors:	Huang,KF;Hsieh,TP;Yeh,NT;Ho,WJ;Chyi,JI;Wu,MC
Contributors:	電機工程研究所
Keywords:	THRESHOLD CURRENT;LIGHT-EMISSION;DEPENDENCE;LASERS
Date:	2004
Issue Date:	2010-07-06 18:25:39 (UTC+8)
Publisher:	中央大學
Abstract:	In this paper, we investigate the effects of growth temperature and growth rate on the formation of InAs/GaAs quantum dots (QDs) grown by metalorganic chemical vapor deposition. These QDs are formed with large InAs coverage (3.0 MLs) and periodic growth i
Relation:	JOURNAL OF CRYSTAL GROWTH
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	851	View/Open

社群 sharing