Diffusion mechanism and photoluminescence of erbium in GaN

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32472

Title:	Diffusion mechanism and photoluminescence of erbium in GaN
Authors:	Ting,YS;Chen,CC;Lee,CC;Chi,GC;Chini,TK;Chakraborty,P;Chuang,HW;Tsang,JS;Kuo,CT;Tsai,WC;Chen,SH;Chyi,JI
Contributors:	電機工程研究所
Keywords:	MOLECULAR-BEAM EPITAXY;DOPED GAN;IMPLANTED GAN;ER;EMISSION;ELECTROLUMINESCENCE;SI;EU
Date:	2003
Issue Date:	2010-07-06 18:28:59 (UTC+8)
Publisher:	中央大學
Abstract:	Erbium has been diffused into GaN for the first time. A weak spontaneous emission is observed in the photoluminescence spectra after the diffusion process during 168 h at 800 degreesC, under N-2 atmosphere. The diffusion coefficient of erbium in GaN is ob
Relation:	OPTICAL MATERIALS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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