DC Characteristics of InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51928

Title:	DC Characteristics of InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors
Authors:	Chen,SH;Chang,CM;Chiang,PY;Wang,SY;Chang,WH;Chyi,JI
Contributors:	電機工程學系
Keywords:	DHBTS;BASE;COLLECTOR;F(MAX);F(T);GHZ
Date:	2010
Issue Date:	2012-03-28 10:10:40 (UTC+8)
Publisher:	國立中央大學
Abstract:	DC electrical characteristics of a series of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors (DHBTs) that are grown on InP by molecular beam epitaxy are reported and analyzed. The InGaAsSb base of the transistors leads to a type-I base-emitter junction and a type-II base-collector junction, resulting in unique device characteristics, such as low turn-on voltage, low crossover current, and constant current gain over a wide current range. In addition, the DHBTs exhibit rather high current gains despite the use of a heavily doped thick InGaAsSb base layer. This indicates the long minority carrier lifetime of the InGaAsSb material. A high current gain over base sheet resistance ratio is, thus, realized with these novel DHBTs.
Relation:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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