DC Characteristics of InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors

NCU Institutional Repository > 資訊電機學院 > 電機工程學系 > 期刊論文 > Item 987654321/51928

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/51928

题名:	DC Characteristics of InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors
作者:	Chen,SH;Chang,CM;Chiang,PY;Wang,SY;Chang,WH;Chyi,JI
贡献者:	電機工程學系
关键词:	DHBTS;BASE;COLLECTOR;F(MAX);F(T);GHZ
日期:	2010
上传时间:	2012-03-28 10:10:40 (UTC+8)
出版者:	國立中央大學
摘要:	DC electrical characteristics of a series of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors (DHBTs) that are grown on InP by molecular beam epitaxy are reported and analyzed. The InGaAsSb base of the transistors leads to a type-I base-emitter junction and a type-II base-collector junction, resulting in unique device characteristics, such as low turn-on voltage, low crossover current, and constant current gain over a wide current range. In addition, the DHBTs exhibit rather high current gains despite the use of a heavily doped thick InGaAsSb base layer. This indicates the long minority carrier lifetime of the InGaAsSb material. A high current gain over base sheet resistance ratio is, thus, realized with these novel DHBTs.
關聯:	IEEE TRANSACTIONS ON ELECTRON DEVICES
显示于类别:	[電機工程學系] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	400	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing