Testing Random Defect and Process Variation Induced Comparison Faults of TCAMs with Asymmetric Cells

NCU Institutional Repository > 資訊電機學院 > 電機工程學系 > 期刊論文 > Item 987654321/51999

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/51999

题名:	Testing Random Defect and Process Variation Induced Comparison Faults of TCAMs with Asymmetric Cells
作者:	Li,JF;Huang,YJ;Hu,YJ
贡献者:	電機工程學系
关键词:	MEMORIES
日期:	2010
上传时间:	2012-03-28 10:12:57 (UTC+8)
出版者:	國立中央大學
摘要:	This paper presents a march-like test T(AC-P) to cover comparison faults of ternary content addressable memories (TCAMs) with asymmetric cells. The T(AC-P) only requires 4N Write operations and (3N + 2B) Compare operations for an N x B-bit TCAM with Hit and priority address encoder outputs. We show that the test also can cover search time failures induced by process variation in the comparison circuit of a TCAM. Furthermore, a test T(MF) for match failures induced by the process variation in the comparison circuit of a TCAM is also presented.
關聯:	IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
显示于类别:	[電機工程學系] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	296	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing