高速空乏型氮化鎵功率元件參數驗證;Parameter Verification of High Speed Depletion-Mode GaN Power Devices

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/74953

Title:	高速空乏型氮化鎵功率元件參數驗證;Parameter Verification of High Speed Depletion-Mode GaN Power Devices
Authors:	劉宗興;Liu, Chung-Hsing
Contributors:	電機工程學系
Keywords:	空乏型;氮化鎵;閘極電荷;開關切換時間;Depletion-mode;GaN;gate charge;switching time
Date:	2017-08-11
Issue Date:	2017-10-27 16:12:54 (UTC+8)
Publisher:	國立中央大學
Abstract:	氮化鎵(GaN)功率電晶體具有高載子遷移率、高崩潰電壓、高電流密度、低導通電阻、低柵極電荷，以及低輸出電容等材料特性，適合用於功率電子電路中所需的高速開關。本篇論文主要設計簡易測量電路用於量測空乏型氮化鎵功率電晶體之部分電性參數，電路設計的重點在校正測量開關切換時間、閘極電荷，以及閘極電壓-汲極電流曲線三種參數，以供後續功率電路設計所需，文中詳細說明測量電路設計以及量測方法，並比對測量值與估計值的誤差，因受限於所設計的測量電路，測量值誤差約達32%。 ;Gallium Nitride (GaN) power transistors exist better material properties than Si-based transistors such as higher electron mobility, higher breakdown voltage, higher current density, lower on-state resistance, lower gate charge and smaller output capacitance. It is particularly suitable to function as high speed switches for power electronic circuit applications. The thesis aims to design a circuit module to measure three electrical parameters of depletion-mode GaN power transistors in order to provide information for power electronic circuit design. Three major parameters include switching time, gate charge, and DC-IV curve. A detailed description of the designed circuits is given and measurement results are compared to the estimation model. The measurement error is about 32% because of design issues of the circuit module.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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