本研究透過奈米球微影術結合濕式化學蝕刻法製備出大面積均一尺寸之奈米倒金字塔陣列取代傳統光阻及光罩以低成本將單晶矽表面圖案化，並以此為基礎成功在N-type(100)矽晶圓上以室溫光輔助電化學蝕刻法製備出大面積規則矽單晶奈米孔洞陣列，利用此方法可以透過形成高深寬比且具有漸變折射率之錐型結構，並探討隨著蝕刻時間增加對光學性質及親疏水性質的變化。 本研究透過兩種方式改善近紅外光波段的吸收率，其一為透過無電鍍沉積法沉積銀奈米顆粒形成矽單晶奈米通道/銀奈米顆粒異質結構，並探討沉積時間對光學之影響。第二種方法為透過金屬濺鍍沉積法均勻濺鍍鎳金屬薄膜於結構表面，並在高溫爐中退火形成矽化鎳奈米孔洞結構，透過近紅外光光譜量測發現和純矽基材料相比在近紅外光波段鎳矽化物奈米孔洞陣列的吸收率提升，並且在可見光波段的吸收度比矽/銀奈米顆粒異質結構較佳，證明金屬矽化物在改善在近紅外光波段矽基奈米材料的可用性。本研究提供一簡易途徑可製備高效且高穩定性之矽化鎳奈米孔洞陣列製備過程，並在各式光學器件都有良好的前景。 ;In this study, we combined the polystyrene nanosphere lithography and wet chemical etching to fabricate large-area, uniform-sized inverted pyramid arrays, replacing traditional photoresists and photomasks to pattern silicon surfaces at low cost. After that, we developed a novel and room-temperature approach, a large-area, regular silicon single-crystal nanochannel array was successfully fabricated on N-type (100) silicon wafer This method allows for the formation of high aspect ratio tapered structures with gradient refractive indices. The study investigates the changes in optical properties and hydrophobic/hydrophilic properties with increased etching time. Two strategies be considered to enhance the absorption in the near-infrared wavelength. The first method involves depositing silver nanoparticles by electroless plating to form silicon/silver heterostructure, and the impact of deposition time on optical properties is explored. The second method employs metal sputtering to uniformly deposit a nickel metal film on the surface of the structure, followed by high-temperature annealing in a furnace with pure nitrogen to form a nickel silicide nanochannel structure. Spectral measurements reveal that compared to pure silicon nanostructure, the NiSi nanostructure exhibit enhanced the near-infrared absorption and better absorption in the visible region compared to the silicon channel/silver nanoparticle heterostructure. This study provides a simple approach to fabricate high-efficiency and high-stability nickel silicide nanochannel arrays, showing good prospects for various optical devices.
