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類別	日期	題名	作者
[物理研究所] 期刊論文	1996	X-ray crystallographic study of GaN epitaxial films on Al2O3(0001) substrates with GaN buffer layers	Lee,CH; Chi,GC; Lin,CF; Feng,MS; Guo,JD
[物理研究所] 期刊論文	1996	The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer	Lin,CF; Chi,GC; Feng,MS; Guo,JD; Tsang,JS; Hong,JMH
[物理研究所] 期刊論文	1996	A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films	Guo,JD; Lin,CI; Feng,MS; Pan,FM; Chi,GC; Lee,CT
[物理研究所] 期刊論文	1997	Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures	Lin,CF; Cheng,HC; Huang,JA; Feng,MS; Guo,JD; Chi,GC
[物理研究所] 期刊論文	1997	Growth and characterizations of GaN on SiC substrates with buffer layers	Lin,CF; Cheng,HC; Chi,GC; Feng,MS; Guo,JD; Hong,JMH; Chen,CY
[物理研究所] 期刊論文	1997	Characterization of GaN epitaxial layers on SiC substrates with AlxGa1-xN buffer layers	Lin,CF; Cheng,HC; Feng,MS; Chi,GC
[物理研究所] 期刊論文	2000	Improved contact performance of GaN film using Si diffusion	Lin,CF; Cheng,HC; Chi,GC; Bu,CJ; Feng,MS