English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 80990/80990 (100%)
造訪人次 : 41625141      線上人數 : 1868
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧：
  • 您可在西文檢索詞彙前後加上"雙引號"，以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋，建議至進階搜尋限定作者欄位，可獲得較完整資料
    •  進階搜尋

    類別瀏覽

    正在載入社群分類, 請稍候....

    年代瀏覽

    正在載入年代分類, 請稍候....

    "Chi,GC"的相關文件 

    回到依作者瀏覽

    顯示 124 項.

    類別 日期 題名 作者 檔案
    [化學研究所] 期刊論文 2002 Enhanced electroluminescence of polymer light-emitting diodes with direct polyaniline synthesized anodes Chen,CC; Hwang,SR; Li,WH; Lee,KC; Chi,GC; Hsiao,HT; Wu,CG
    [光電科學研究中心] 期刊論文 2009 Optical and structural properties of Eu-diffused and doped ZnO nanowires Pan,CJ; Chen,CW; Chen,JY; Huang,PJ; Chi,GC; Chang,CY; Ren,F; Pearton,SJ
    [光電科學研究中心] 期刊論文 2009 Optical and structural properties of Mg-ion implanted GaN nanowires Huang,PJ; Chen,CW; Chen,JY; Chi,GC; Pan,CJ; Kuo,CC; Chen,LC; Hsu,CW; Chen,KH; Hung,SC; Chang,CY; Pearton,SJ; Ren,F
    [光電科學研究中心] 期刊論文 2009 Optical investigation of nitrogen ion implanted bulk ZnO Pall,CJ; Chen,JY; Chi,GC; Chou,BW; Pong,BJ; Ren,F; Chang,CY; Pearton,SJ
    [光電科學研究中心] 期刊論文 2005 Photoluminescence of ZnO films grown by plasma-assisted molecular beam epitaxy Pan,CJ; Tu,CW; Song,JJ; Cantwell,G; Lee,CC; Pong,BJ; Chi,GC
    [光電科學研究中心] 期刊論文 2003 Deep level defect in Si-implanted GaN n(+)-p junction Chen,XD; Huang,Y; Fung,S; Beling,CD; Ling,CC; Sheu,JK; Lee,ML; Chi,GC; Chang,SJ
    [光電科學研究中心] 期刊論文 2003 Fabrication of optical transmission elements in an SiNx membrane Lee,CC; Chang,YC; Chang,JY; Chiu,CF; Chi,GC
    [光電科學研究中心] 期刊論文 2003 White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors Sheu,JK; Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Lin,YC; Lai,WC; Tsai,JM; Chi,GC; Wu,RK
    [光電科學研究中心] 期刊論文 2002 Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN Chiou,JW; Mookerjee,S; Rao,KVR; Jan,JC; Tsai,HM; Asokan,K; Pong,WF; Chien,FZ; Tsai,MH; Chang,YK; Chen,YY; Lee,JF; Lee,CC; Chi,GC
    [光電科學研究中心] 期刊論文 2002 Characterization of Si implants in p-type GaN Sheu,JK; Lee,ML; Tun,CJ; Kao,CJ; Yeh,LS; Chang,SJ; Chi,GC
    [光電科學研究中心] 期刊論文 2002 Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure Chen,CC; Hsieh,KL; Sheu,JK; Chi,GC; Jou,MJ; Lee,CH; Lin,MZ
    [光電科學研究中心] 期刊論文 2002 InGaN/GaN light emitting diodes activated in O-2 ambient Kuo,CH; Chang,SJ; Su,YK; Chen,JF; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
    [光電科學研究中心] 期刊論文 2002 Low temperature activation of Mg-doped GaN in O-2 ambient Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Chen,CH; Chi,GC
    [光電科學研究中心] 期刊論文 2002 n(+)-GaN formed by Si implantation into p-GaN Sheu,JK; Tun,CJ; Tsai,MS; Lee,CC; Chi,GC; Chang,SJ; Su,YK
    [光電科學研究中心] 期刊論文 2002 Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching Wen,TC; Lee,WI; Sheu,JK; Chi,GC
    [光電科學研究中心] 期刊論文 2002 The doping process and dopant characteristics of GaN Sheu,JK; Chi,GC
    [光電科學研究中心] 期刊論文 2002 White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer Sheu,JK; Pan,CJ; Chi,GC; Kuo,CH; Wu,LW; Chen,CH; Chang,SJ; Su,YK
    [光電科學研究中心] 期刊論文 2001 Activation analysis of rapid thermally annealed Si and Mg co-implanted semi-insulating GaAs Lee,CC; Wu,LW; Chi,GC
    [光電科學研究中心] 期刊論文 2001 Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition Wen,TC; Lee,WI; Sheu,JK; Chi,GC
    [光電科學研究中心] 期刊論文 2001 Characterization of the properties of Mg-doped Al0.15Ga0.85N/GaN superlattices Sheu,JK; Kuo,CH; Chen,CC; Chi,GC; Jou,MJ
    [光電科學研究中心] 期刊論文 2001 Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer Sheu,JK; Chi,GC; Jou,MJ
    [光電科學研究中心] 期刊論文 2001 Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice Sheu,JK; Chi,GC; Jou,MJ
    [光電科學研究中心] 期刊論文 2001 Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer Sheu,JK; Tsai,JM; Shei,SC; Lai,WC; Wen,TC; Kou,CH; Su,YK; Chang,SJ; Chi,GC
    [光電科學研究中心] 期刊論文 2000 Microstructural evolution in a multiple composite layer of GaN on sapphire by organometallic vapor phase epitaxy Yang,CC; Wu,MC; Lee,CH; Chi,GC
    [光電科學研究中心] 期刊論文 2000 Optical properties in InGaN/GaN multiple quantum wells and blue LEDs Su,YK; Chi,GC; Sheu,JK
    [光電科學研究中心] 期刊論文 2000 The doping process of p-type GaN films Chi,GC; Kuo,CH; Sheu,JK; Pan,CJ
    [光電科學研究中心] 期刊論文 1999 Effects of multiple buffer layers on structural electronic properties of GaN growth by atmospheric pressure Organometallic Vapor Phase Epitaxy Yang,CC; Wu,MC; Chang,CA; Chi,GC
    [光電科學研究所] 期刊論文 2009 Characterization of ZnO nanowires grown on Si (100) with and without Au catalyst Chen,JY; Pan,CJ; Tsao,FC; Kuo,CH; Chi,GC; Pong,BJ; Chang,CY; Norton,DP; Pearton,SJ
    [光電科學研究所] 期刊論文 2009 Dislocation reduction in GaN with double MgxNy/AlN buffer layer by metal organic chemical vapor deposition Kuo,CW; Fu,YK; Kuo,CH; Chang,LC; Tun,CJ; Pan,CJ; Chi,GC
    [光電科學研究所] 期刊論文 2009 Growth and characterization of c-plane AlGaN on gamma-LiAlO2 Tun,CJ; Kuo,CH; Fu,YK; Kuo,CW; Chou,MMC; Chi,GC
    [光電科學研究所] 期刊論文 2009 Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls Kuo,CW; Lee,YC; Fu,YK; Tsai,CH; Wu,ML; Chi,GC; Kuo,CH; Tun,CJ
    [光電科學與工程學系] 期刊論文 2010 Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step Kuo,CH; Fu,YK; Chi,GC; Chang,SJ
    [光電科學與工程學系] 期刊論文 2010 Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template Kuo,CH; Chang,LC; Kuo,CW; Chi,GC
    [光電科學與工程學系] 期刊論文 2004 Gratings in GaN membranes Chen,CC; Hou,CH; Sheu,JK; Chang,JY; Li,MH; Chi,GC; Wu,C
    [光電科學與工程學系] 期刊論文 2004 Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer Lee,ML; Sheu,JK; Su,YK; Chang,SJ; Lai,WC; Chi,GC
    [光電科學與工程學系] 期刊論文 2004 Si diffusion in p-GaN Pan,CJ; Chi,GC; Pong,BJ; Sheu,JK; Chen,JY
    [光電科學與工程學系] 期刊論文 2004 Ultra-high-density InGaN quantum dots grown by metalorganic chemical vapor deposition Tu,RC; Tun,CJ; Chuo,CC; Lee,BC; Tsai,CE; Wang,TC; Chi,J; Lee,CP; Chi,GC
    [光電科學與工程學系] 期刊論文 2003 Electrical-efficiency analysis of GaN-based light-emitting diodes with interdigitated-mesa geometry Ting,YS; Chen,CC; Sheu,JK; Chi,GC; Hsu,JT
    [光電科學與工程學系] 期刊論文 2003 Gallium nitride diffractive microlenses using in ultraviolet micro-optics system Hou,CH; Li,MH; Chen,CC; Chang,JY; Sheu,JK; Chi,GC; Wu,C; Cheng,WT; Yeh,JH
    [光電科學與工程學系] 期刊論文 2003 Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer Tu,RC; Tun,CJ; Shen,JK; Kuo,WH; Wang,TC; Tsai,CE; Hsu,JT; Chi,J; Chi,GC
    [光電科學與工程學系] 期刊論文 2003 Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers Tu,RC; Chuo,CC; Pan,SM; Fan,YM; Tsai,CE; Wang,TC; Tun,CJ; Chi,GC; Lee,BC; Lee,CP
    [光電科學與工程學系] 期刊論文 2003 Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers Tu,RC; Tun,CJ; Pan,SM; Liu,HP; Tsai,CE; Sheu,JK; Chuo,CC; Wang,TC; Chi,GC; Chen,IG
    [光電科學與工程學系] 期刊論文 2003 Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature Tu,RC; Tun,CJ; Pan,SM; Chuo,CC; Sheu,JK; Tsai,CE; Wang,TC; Chi,GC
    [光電科學與工程學系] 期刊論文 2003 Silicon-based transmissive diffractive optical element Lee,CC; Chang,YC; Wang,CM; Chang,JY; Chi,GC
    [光電科學與工程學系] 期刊論文 2003 Thermal annealing effects on the optical gain of InGaN/GaN quantum well structures Chen,CC; Hsueh,TH; Ting,YS; Chi,GC; Chang,CA; Wang,SC
    [光電科學與工程學系] 期刊論文 2002 Design of GaN convex diffractive microlenses Chen,CC; Chang,JY; Chi,GC
    [光電科學與工程學系] 期刊論文 2001 Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices Kuo,CH; Sheu,JK; Chi,GC; Huang,YL; Yeh,TW
    [物理研究所] 期刊論文 2009 Density-dependent energy relaxation of hot electrons in InN epilayers Yang,MD; Liu,YW; Shen,JL; Chen,CW; Chi,GC; Lin,TY; Chou,WC; Lo,MH; Kuo,HC; Lu,TC
    [物理研究所] 期刊論文 2009 Minipressure sensor using AlGaN/GaN high electron mobility transistors Hung,SC; Chou,BH; Chang,CY; Lo,CF; Chen,KH; Wang,YL; Pearton,SJ; Dabiran,A; Chow,PP; Chi,GC; Ren,F
    [物理研究所] 期刊論文 2009 Morphology and optical properties of zinc oxide thin films grown on Si (100) by metal-organic chemical vapor deposition Lan,SM; Uen,WY; Chan,CE; Chang,KJ; Hung,SC; Li,ZY; Yang,TN; Chiang,CC; Huang,PJ; Yang,MD; Chi,GC; Chang,CY
    [物理研究所] 期刊論文 2009 Surface morphology and optical properties of ZnO epilayers grown on Si(111) by metal organic chemical vapor deposition Hung,SC; Huang,PJ; Chan,CE; Uen,WY; Ren,F; Pearton,SJ; Yang,TN; Chiang,CC; Lan,SM; Chi,GC
    [物理研究所] 期刊論文 2006 Effects of thermal annealing on Al-doped ZnO films deposited on p-type gallium nitride Tun,CJ; Sheu,JK; Lee,ML; Hu,CC; Hsieh,CK; Chi,GC
    [物理研究所] 期刊論文 2005 Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors Kao,CJ; Chen,MC; Tun,CJ; Chi,GC; Sheu,JK; Lai,WC; Lee,ML; Ren,F; Pearton,SJ
    [物理研究所] 期刊論文 2005 Comparison of ZnO metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition Kao,CJ; Kwon,YW; Heo,YW; Norton,DP; Pearton,SJ; Ren,F; Chi,GC
    [物理研究所] 期刊論文 2005 Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metallorganic vapor phase Sheu,JK; Chen,SS; Lee,ML; Lai,WC; Chi,GC
    [物理研究所] 期刊論文 2005 Fabrication of hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN light-emitting diodes Yang,HS; Han,SY; Heo,YW; Baik,KH; Norton,DP; Pearton,SJ; Ren,F; Osinsky,A; Dong,JW; Hertog,B; Dabiran,AM; Chow,PP; Chernyak,L; Steiner,T; Kao,CJ; Chi,GC
    [物理研究所] 期刊論文 2005 Improved thermal stability CrB2 contacts on ZnO Ip,K; Khanna,R; Norton,DP; Pearton,SJ; Ren,F; Kravchenko,I; Kao,CJ; Chi,GC
    [物理研究所] 期刊論文 2005 Rectifying characteristics of WSi0.8-GaN Schottky barrier diodes with a GaN cap layer grown at low temperature Sheu,JK; Lee,ML; Lai,WC; Tseng,HC; Chi,GC
    [物理研究所] 期刊論文 2005 Thermal stability of W2B and W2B5 contacts on ZnO Ip,K; Khanna,R; Norton,DP; Pearton,SJ; Ren,F; Kravchenko,I; Kao,CJ; Chi,GC
    [物理研究所] 期刊論文 2005 Transport properties of InN nanowires Chang,CY; Chi,GC; Wang,WM; Chen,LC; Chen,KH; Ren,F; Pearton,SJ
    [物理研究所] 期刊論文 2005 W2B-based ohmic contacts to n-GaN Khanna,R; Pearton,SJ; Ren,F; Kravchenko,I; Kao,CJ; Chi,GC
    [物理研究所] 期刊論文 2005 W2B-based rectifying contacts to n-GaN Khanna,R; Pearton,SJ; Ren,F; Kravchenko,I; Kao,CJ; Chi,GC
    [物理研究所] 期刊論文 2004 Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors Kao,CJ; Sheu,JK; Lai,WC; Lee,ML; Chen,MC; Chi,GC
    [物理研究所] 期刊論文 2003 Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,SJ; Kao,CJ; Tun,CJ; Chen,MG; Chang,WH; Chi,GC; Tsai,JM
    [物理研究所] 期刊論文 2003 GaN diffractive microlenses fabricated with gray-level mask Chen,CC; Li,MH; Chang,CY; Sheu,JK; Chi,GC; Cheng,WT; Yeh,JH; Chang,JY; Ito,T
    [物理研究所] 期刊論文 2003 GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts Chang,SJ; Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,CS; Kao,CJ; Chi,GC; Tsai,JA
    [物理研究所] 期刊論文 2003 Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer Sheu,JK; Kao,CJ; Lee,ML; Lai,WC; Yeh,LS; Chi,GC; Chang,SJ; Su,YK; Tsa,JM
    [物理研究所] 期刊論文 2003 Simplified sedimentation process for 3D photonic thick layers/bulk crystals with a stop-band in the visible range Bresson,F; Chen,CC; Chi,GC; Chen,YW
    [物理研究所] 期刊論文 2003 Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure Yeh,LS; Lee,ML; Sheu,JK; Chen,MG; Kao,CJ; Chi,GC; Chang,SJ; Su,YK
    [物理研究所] 期刊論文 2002 GaN p-n junction diode formed by Si ion implantation into p-GaN Lee,ML; Sheu,JK; Yeh,LS; Tsai,MS; Kao,CJ; Tun,CJ; Chang,SJ; Chi,GC
    [物理研究所] 期刊論文 2002 High brightness green light emitting diodes with charge asymmetric resonance tunneling structure Chen,CH; Su,YK; Chang,SJ; Chi,GC; Sheu,JK; Chen,JF; Liu,CH; Liaw,YH
    [物理研究所] 期刊論文 2002 High-efficiency InGaN-GaN MQW green light-emitting diodes with CART and DBR structures Chen,CH; Chang,SJ; Su,YK; Chi,GC; Sheu,JK; Chen,JF
    [物理研究所] 期刊論文 2002 Planar GaN n(+)-p photodetectors formed by Si implantation into p-GaN Sheu,JK; Lee,ML; Yeh,LS; Kao,CJ; Tun,CJ; Chen,MG; Chi,GC; Chang,SJ; Su,YK; Lee,CT
    [物理研究所] 期刊論文 2001 Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures Chen,CC; Hsieh,KL; Sheu,JK; Chi,GC; Jou,MJ; Lee,CH; Lin,MZ
    [物理研究所] 期刊論文 2001 Effects of In and Ga interdiffusion on the optical gain of InGaN/GaN quantum well Chen,CC; Hsueh,TH; Ting,YS; Chi,GC; Chang,CA
    [物理研究所] 期刊論文 2001 GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts Chen,CH; Chang,SJ; Su,YK; Chi,GC; Chi,JY; Chang,CA; Sheu,JK; Chen,JF
    [物理研究所] 期刊論文 2001 Vertical high quality mirrorlike facet of GaN-based device by reactive ion etching Chen,CHS; Chang,SJ; Su,YKI; Chi,GC; Sheu,JK; Lin,IC
    [物理研究所] 期刊論文 2000 Improved contact performance of GaN film using Si diffusion Lin,CF; Cheng,HC; Chi,GC; Bu,CJ; Feng,MS
    [物理研究所] 期刊論文 2000 Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces Sheu,JK; Su,YK; Chi,GC; Jou,MJ; Liu,CC; Chang,CM; Hung,WC; Bow,JS; Yu,YC
    [物理研究所] 期刊論文 2000 Luminescence of an InGaN/GaN multiple quantum well light-emitting diode Sheu,JK; Chi,GC; Su,YK; Liu,CC; Chang,CM; Hung,WC; Jou,MJ
    [物理研究所] 期刊論文 2000 Properties of Mg activation in thermally treated GaN : Mg films Lin,CF; Cheng,HC; Chang,CC; Chi,GC
    [物理研究所] 期刊論文 2000 Temperature dependent performance of GaN Schottky diode rectifiers Cao,XA; Dang,GT; Zhang,AP; Ren,F; Pearton,SJ; Lee,CM; Chuo,CC; Chyi,JI; Chi,GC; Han,J; Chu,SNG; Wilson,RG
    [物理研究所] 期刊論文 2000 W ohmic contact for highly doped n-type GaN films Lin,CF; Cheng,HC; Chi,GC
    [物理研究所] 期刊論文 1999 Effectiveness of multiple-pair buffer layer to improve the GaN layers grown by metalorganic chemical vapor deposition Yang,CC; Wu,MC; Chang,CA; Chi,GC
    [物理研究所] 期刊論文 1999 Effects of H-2/NH3 flow-rate ratio on the luminescent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD Yang,CC; Koh,PL; Wu,MC; Lee,CH; Chi,GC
    [物理研究所] 期刊論文 1999 Electrical and optical changes in the near surface of reactively ion etched n-GaN Chen,JY; Pan,CJ; Chi,GC
    [物理研究所] 期刊論文 1999 Growth and characterization of GaN by atomsphere pressure metalorganic chemical-vapor deposition with a novel separate-flow reactor Yang,CC; Huang,CK; Chi,GC; Wu,MC
    [物理研究所] 期刊論文 1999 High-transparency Ni/Au ohmic contact to p-type GaN Sheu,JK; Su,YK; Chi,GC; Koh,PL; Jou,MJ; Chang,CM; Liu,CC; Hung,WC
    [物理研究所] 期刊論文 1999 Improvement of GaN layer quality by using the bulk-GaN buffer structure grown by metalorganic chemical vapor deposition Yang,CC; Wu,MC; Chi,GC
    [物理研究所] 期刊論文 1999 Indium tin oxide ohmic contact to highly doped n-GaN Sheu,JK; Su,YK; Chi,GC; Jou,MJ; Liu,CC; Chang,CM
    [物理研究所] 期刊論文 1999 Inductively coupled plasma etching of GaN using Cl-2/Ar and Cl-2/N-2 gases Sheu,JK; Su,YK; Chi,GC; Jou,MJ; Liu,CC; Chang,CM; Hung,WC
    [物理研究所] 期刊論文 1999 The doping of GaN with Mg diffusion Pan,CJ; Chi,GC
    [物理研究所] 期刊論文 1999 The improvement of GaN epitaxial layer quality by the design of reactor chamber spacing Yang,CC; Chi,GC; Huang,CK; Wu,MC
    [物理研究所] 期刊論文 1999 X-ray diffraction characterization of epitaxial zinc-blende GaN films on a miscut GaAs(001) substrates using the hydride vapor-phase epitaxy method Yang,CC; Wu,MC; Lee,CH; Chi,GC
    [物理研究所] 期刊論文 1998 Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN Sheu,JK; Su,YK; Chi,GC; Jou,MJ; Chang,CM
    [物理研究所] 期刊論文 1998 Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers Sheu,JK; Su,YK; Chang,SJ; Chi,GC; Lin,KB; Liu,CC; Chiu,CC
    [物理研究所] 期刊論文 1998 Investigation of wafer-bonded (AlxGa1-x)(0.5)In0.5P/GaP light-emitting diodes Sheu,JK; Su,YK; Chang,SJ; Jou,MJ; Liu,CC; Chi,GC
    [物理研究所] 期刊論文 1998 Non-optimal rates of ergodic limits and approximate solutions Pong,BJ; Pan,CJ; Teng,YC; Chi,GC; Li,WH; Lee,KC; Lee,CH
    [物理研究所] 期刊論文 1998 Photoluminescence spectroscopy of Mg-doped GaN Sheu,JK; Su,YK; Chi,GC; Pong,BJ; Chen,CY; Huang,CN; Chen,WC
    [物理研究所] 期刊論文 1998 The effect of thermal annealing on the Ni/Au contact of p-type GaN Sheu,JK; Su,YK; Chi,GC; Chen,WC; Chen,CY; Huang,CN; Hong,JM; Yu,YC; Wang,CW; Lin,EK
    [物理研究所] 期刊論文 1998 Two-dimensional electron gas and persistent photoconductivity in AlxGa1-xN/GaN heterostructures Lin,TY; Chen,HM; Tsai,MS; Chen,YF; Fang,FF; Lin,CF; Chi,GC
    [物理研究所] 期刊論文 1997 Characterization of GaN epitaxial layers on SiC substrates with AlxGa1-xN buffer layers Lin,CF; Cheng,HC; Feng,MS; Chi,GC
    [物理研究所] 期刊論文 1997 Growth and characterizations of GaN on SiC substrates with buffer layers Lin,CF; Cheng,HC; Chi,GC; Feng,MS; Guo,JD; Hong,JMH; Chen,CY
    [物理研究所] 期刊論文 1997 Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures Lin,CF; Cheng,HC; Huang,JA; Feng,MS; Guo,JD; Chi,GC
    [物理研究所] 期刊論文 1996 A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films Guo,JD; Lin,CI; Feng,MS; Pan,FM; Chi,GC; Lee,CT
    [物理研究所] 期刊論文 1996 AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology Chang,SJ; Sheu,JK; Su,YK; Jou,MJ; Chi,GC
    [物理研究所] 期刊論文 1996 The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer Lin,CF; Chi,GC; Feng,MS; Guo,JD; Tsang,JS; Hong,JMH
    [物理研究所] 期刊論文 1996 X-ray crystallographic study of GaN epitaxial films on Al2O3(0001) substrates with GaN buffer layers Lee,CH; Chi,GC; Lin,CF; Feng,MS; Guo,JD
    [物理研究所] 期刊論文 1995 Top sawtooth grating for GaAs/AlGaAs quantum well IR detectors Chi,GC; Juang,C
    [物理學系] 期刊論文 2011 Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers Sheu,JK; Tu,SJ; Lee,ML; Yeh,YH; Yang,CC; Huang,FW; Lai,WC; Chen,CW; Chi,GC
    [物理學系] 期刊論文 2011 High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature Hung,SC; Chen,CW; Shieh,CY; Chi,GC; Fan,R; Pearton,SJ
    [物理學系] 期刊論文 2011 Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure Chen,CW; Hung,SC; Lee,CH; Tun,CJ; Kuo,CH; Yang,MD; Yeh,CW; Wu,CH; Chi,GC
    [物理學系] 期刊論文 2011 Oxygen sensors made by monolayer graphene under room temperature Chen,CW; Hung,SC; Yang,MD; Yeh,CW; Wu,CH; Chi,GC; Ren,F; Pearton,SJ
    [物理學系] 期刊論文 2010 Catalyst-free ZnO nanowires grown on a-plane GaN Chen,CW; Pan,CJ; Tsao,FC; Liu,YL; Kuo,CW; Kuo,CH; Chi,GC; Chen,PH; Lai,WC; Hsueh,TH; Tun,CJ; Chang,CY; Pearton,SJ; Ren,F
    [物理學系] 期刊論文 2010 Determination of the microstructure of Eu-treated ZnO nanowires by x-ray absorption Huang,WL; Labis,J; Ray,SC; Liang,YR; Pao,CW; Tsai,HM; Du,CH; Pong,WF; Chiou,JW; Tsai,MH; Lin,HJ; Lee,JF; Chou,YT; Shen,JL; Chen,CW; Chi,GC
    [電機工程研究所] 期刊論文 2003 Diffusion mechanism and photoluminescence of erbium in GaN Ting,YS; Chen,CC; Lee,CC; Chi,GC; Chini,TK; Chakraborty,P; Chuang,HW; Tsang,JS; Kuo,CT; Tsai,WC; Chen,SH; Chyi,JI
    [電機工程研究所] 期刊論文 2003 Er diffusion into gallium nitride Chen,CC; Ting,YS; Lee,CC; Chi,GC; Chakraborty,P; Chini,T; Chuang,HW; Tsang,JS; Kuo,CT; Tsai,WC; Chen,SH; Chyi,JI
    [電機工程研究所] 期刊論文 2002 Thermal annealing effects on stimulated emission of high-indium-content InGaN/GaN single quantum well structure Chen,CC; Hsieh,KL; Chi,GC; Chuo,CC; Chyi,JI; Chang,CA
    [電機工程研究所] 期刊論文 2001 Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures Chen,CC; Hsieh,KL; Chi,GC; Chuo,CC; Chyi,JI; Chang,CA
    [電機工程研究所] 期刊論文 2001 Improvement of diodes performance with a multiple-pair buffer layer by MOCVD Yang,CC; Wu,MC; Chi,GC; Chuo,CC; Chyi,JI
    [電機工程研究所] 期刊論文 2000 Electrical and optical characteristics of the GaN light-emitting diodes with multiple-pair buffer layer Yang,CC; Wu,MC; Chuo,CC; Chyi,JI; Lin,CF; Chi,GC
    [電機工程研究所] 期刊論文 2000 Processing and device performance of GaN power rectifiers Zhang,AP; Dang,GT; Cao,XA; Cho,H; Ren,F; Han,J; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chi,GC; Chu,SNG; Wilson,RG; Pearton,SJ
    [電機工程研究所] 期刊論文 2000 Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures Chen,CC; Chuang,HW; Chi,GC; Chuo,CC; Chyi,JI
    [電機工程研究所] 期刊論文 1999 Growth and device performance of GaN Schottky rectifiers Chyi,JI; Lee,CM; Chuo,CC; Chi,GC; Dang,GT; Zhang,AP; Ren,F; Cao,XA; Pearton,SJ; Chu,SNG; Wilson,RG

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期：8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明