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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38858


    Title: Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces
    Authors: Sheu,JK;Su,YK;Chi,GC;Jou,MJ;Liu,CC;Chang,CM;Hung,WC;Bow,JS;Yu,YC
    Contributors: 物理研究所
    Keywords: INDUCTIVELY-COUPLED PLASMA;AL
    Date: 2000
    Issue Date: 2010-07-08 13:41:02 (UTC+8)
    Publisher: 中央大學
    Abstract: In this study, the mechanism for ohmic contact of Ti/Al bilayer formation on as-grown, etched and postetch annealed GaN surfaces were investigated. A nonalloyed Ti/Al ohmic contact to etched GaN surface, with postetch annealing prior to metal deposition,
    Relation: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    Appears in Collections:[物理研究所] 期刊論文

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