"Wen,TC"的相關文件
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顯示 19 項.
類別 |
日期 |
題名 |
作者 |
檔案 |
[化學研究所] 期刊論文 |
2001 |
FTIR and solid state C-13 NMR studies on the interaction of lithium cations with polyether poly(urethane urea) |
Wang,HL; Kao,HM; Digar,M; Wen,TC |
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[化學研究所] 期刊論文 |
2000 |
Direct Li-7 NMR spectral evidence for different Li+ local environments in a polyether poly(urethane urea) electrolyte |
Wang,HL; Kao,HM; Wen,TC |
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[企業管理學系] 期刊論文 |
2010 |
DEVELOPMENT AND APPLICATION OF A DECISION MODEL FOR THE INTEGRATED PRODUCTION AND MATERIAL PLANNING OF COLOR FILTER MANUFACTURING INDUSTRY: AN EMPIRICAL STUDY |
Leu,CT; Wen,TC; Chang,KH |
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[光電科學研究中心] 期刊論文 |
2003 |
In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer |
Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Hsu,YP; Kuo,CH; Lai,WC; Wen,TC; Tsai,JM; Sheu,JK |
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[光電科學研究中心] 期刊論文 |
2003 |
InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer |
Wu,LW; Chang,SJ; Su,YK; Tsai,TY; Wen,TC; Kuo,CH; Lai,WC; Sheu,JK; Tsai,JM; Chen,SC; Huang,BR |
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[光電科學研究中心] 期刊論文 |
2003 |
InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping |
Wen,TC; Chang,SJ; Su,YK; Wu,LW; Kuo,CH; Lai,WC; Sheu,JK; Tsai,TY |
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[光電科學研究中心] 期刊論文 |
2003 |
Nitride-based blue LEDs with GaN/SiN double buffer layers |
Kuo,CH; Chang,SJ; Su,YK; Wang,CK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Lin,CC |
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[光電科學研究中心] 期刊論文 |
2003 |
Nitride-based green light-emitting diodes with high temperature GaN barrier layers |
Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Wen,TC; Kuo,CH; Lai,WC; Chang,CS; Tsai,JM; Sheu,JK |
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[光電科學研究中心] 期刊論文 |
2003 |
Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers |
Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Chen,SC |
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[光電科學研究中心] 期刊論文 |
2002 |
400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes |
Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Chen,JF; Tsai,JM |
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[光電科學研究中心] 期刊論文 |
2002 |
Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes |
Wu,LW; Chang,SJ; Wen,TC; Su,YK; Chen,JF; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK |
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[光電科學研究中心] 期刊論文 |
2002 |
InGaN/GaN tunnel-injection blue light-emitting diodes |
Wen,TC; Chang,SJ; Wu,LW; Su,YK; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK; Chen,JF |
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[光電科學研究中心] 期刊論文 |
2002 |
Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching |
Wen,TC; Lee,WI; Sheu,JK; Chi,GC |
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[光電科學研究中心] 期刊論文 |
2001 |
Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition |
Wen,TC; Lee,WI; Sheu,JK; Chi,GC |
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[光電科學研究中心] 期刊論文 |
2001 |
Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer |
Sheu,JK; Tsai,JM; Shei,SC; Lai,WC; Wen,TC; Kou,CH; Su,YK; Chang,SJ; Chi,GC |
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[光電科學與工程學系] 期刊論文 |
2005 |
The thickness effect of p-AlGaN blocking layer in UV-A bandpass photodetectors |
Wang,CK; Ko,TK; Chang,CS; Chang,SJ; Su,YK; Wen,TC; Kuo,CH; Chiou,YZ |
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[光電科學與工程學系] 期刊論文 |
2004 |
Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs |
Hsu,YP; Chang,SJ; Su,YK; Sheu,JK; Lee,CT; Wen,TC; Wu,LW; Kuo,CH; Chang,CS; Shei,SC |
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[光電科學與工程學系] 期刊論文 |
2004 |
Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures |
Wen,TC; Chang,SJ; Lee,CT; Lai,WC; Sheu,JK |
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[電機工程研究所] 期刊論文 |
2003 |
Liquid phase deposited SiO2 on GaN |
Wu,HR; Lee,KW; Nian,TB; Chou,DW; Wu,JJH; Wang,YH; Houng,MP; Sze,PW; Su,YK; Chang,SJ; Ho,CH; Chiang,CI; Chern,YT; Juang,FS; Wen,TC; Lee,WI; Chyi,JI |
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