English  |  正體中文  |  简体中文  |  Items with full text/Total items : 78852/78852 (100%)
Visitors : 36289489      Online Users : 679
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32492

    Title: Liquid phase deposited SiO2 on GaN
    Authors: Wu,HR;Lee,KW;Nian,TB;Chou,DW;Wu,JJH;Wang,YH;Houng,MP;Sze,PW;Su,YK;Chang,SJ;Ho,CH;Chiang,CI;Chern,YT;Juang,FS;Wen,TC;Lee,WI;Chyi,JI
    Contributors: 電機工程研究所
    Date: 2003
    Issue Date: 2010-07-06 18:29:38 (UTC+8)
    Publisher: 中央大學
    Abstract: An efficient and low cost approach to deposit uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) near room temperature are described and discussed. The process is simple. GaN wafers are immersed into a H2SiF6 and H3BO3 solution to form
    Appears in Collections:[電機工程研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明