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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32492


    Title: Liquid phase deposited SiO2 on GaN
    Authors: Wu,HR;Lee,KW;Nian,TB;Chou,DW;Wu,JJH;Wang,YH;Houng,MP;Sze,PW;Su,YK;Chang,SJ;Ho,CH;Chiang,CI;Chern,YT;Juang,FS;Wen,TC;Lee,WI;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: N-TYPE GAN;GALLIUM-ARSENIDE;SILICON DIOXIDE;PERFORMANCE;SIO2-FILMS;MESFETS
    Date: 2003
    Issue Date: 2010-07-06 18:29:38 (UTC+8)
    Publisher: 中央大學
    Abstract: An efficient and low cost approach to deposit uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) near room temperature are described and discussed. The process is simple. GaN wafers are immersed into a H2SiF6 and H3BO3 solution to form
    Relation: MATERIALS CHEMISTRY AND PHYSICS
    Appears in Collections:[電機工程研究所] 期刊論文

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