Liquid phase deposited SiO2 on GaN

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32492

Title:	Liquid phase deposited SiO2 on GaN
Authors:	Wu,HR;Lee,KW;Nian,TB;Chou,DW;Wu,JJH;Wang,YH;Houng,MP;Sze,PW;Su,YK;Chang,SJ;Ho,CH;Chiang,CI;Chern,YT;Juang,FS;Wen,TC;Lee,WI;Chyi,JI
Contributors:	電機工程研究所
Keywords:	N-TYPE GAN;GALLIUM-ARSENIDE;SILICON DIOXIDE;PERFORMANCE;SIO2-FILMS;MESFETS
Date:	2003
Issue Date:	2010-07-06 18:29:38 (UTC+8)
Publisher:	中央大學
Abstract:	An efficient and low cost approach to deposit uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) near room temperature are described and discussed. The process is simple. GaN wafers are immersed into a H2SiF6 and H3BO3 solution to form
Relation:	MATERIALS CHEMISTRY AND PHYSICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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