"Lai,WC"的相關文件
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類別 |
日期 |
題名 |
作者 |
檔案 |
[光電科學研究中心] 期刊論文 |
2004 |
Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact |
Chang,SJ; Chang,CS; Su,YK; Chuang,RW; Lai,WC; Kuo,CH; Hsu,YP; Lin,YC; Shei,SC; Lo,HM; Ke,JC; Sheu,JK |
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[光電科學研究中心] 期刊論文 |
2004 |
Nitride-based near-ultraviolet LEDs with an ITO transparent contact |
Kuo,CH; Chang,SJ; Su,Y; Chuang,RW; Chang,CS; Wu,LW; Lai,WC; Chen,JF; Sheu,J; Lo,HM; Tsai,JM |
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[光電科學研究中心] 期刊論文 |
2003 |
High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact |
Chang,CS; Chang,SJ; Su,YK; Kuo,CH; Lai,WC; Lin,YC; Hsu,YP; Shei,SC; Tsai,JM; Lo,HM; Ke,JC; Shen,JK |
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[光電科學研究中心] 期刊論文 |
2003 |
In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer |
Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Hsu,YP; Kuo,CH; Lai,WC; Wen,TC; Tsai,JM; Sheu,JK |
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[光電科學研究中心] 期刊論文 |
2003 |
InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer |
Wu,LW; Chang,SJ; Su,YK; Tsai,TY; Wen,TC; Kuo,CH; Lai,WC; Sheu,JK; Tsai,JM; Chen,SC; Huang,BR |
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[光電科學研究中心] 期刊論文 |
2003 |
InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping |
Wen,TC; Chang,SJ; Su,YK; Wu,LW; Kuo,CH; Lai,WC; Sheu,JK; Tsai,TY |
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[光電科學研究中心] 期刊論文 |
2003 |
Nitride-based blue LEDs with GaN/SiN double buffer layers |
Kuo,CH; Chang,SJ; Su,YK; Wang,CK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Lin,CC |
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[光電科學研究中心] 期刊論文 |
2003 |
Nitride-based green light-emitting diodes with high temperature GaN barrier layers |
Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Wen,TC; Kuo,CH; Lai,WC; Chang,CS; Tsai,JM; Sheu,JK |
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[光電科學研究中心] 期刊論文 |
2003 |
Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers |
Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Chen,SC |
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[光電科學研究中心] 期刊論文 |
2003 |
Si and Zn co-doped InGaN-GaN white light-emitting diodes |
Chang,SJ; Wu,LW; Su,YK; Kuo,CH; Lai,WC; Hsu,YP; Sheu,JK; Chen,SF; Tsai,JM |
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[光電科學研究中心] 期刊論文 |
2003 |
White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors |
Sheu,JK; Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Lin,YC; Lai,WC; Tsai,JM; Chi,GC; Wu,RK |
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[光電科學研究中心] 期刊論文 |
2002 |
400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes |
Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Chen,JF; Tsai,JM |
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[光電科學研究中心] 期刊論文 |
2002 |
Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes |
Wu,LW; Chang,SJ; Wen,TC; Su,YK; Chen,JF; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK |
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[光電科學研究中心] 期刊論文 |
2002 |
InGaN/GaN tunnel-injection blue light-emitting diodes |
Wen,TC; Chang,SJ; Wu,LW; Su,YK; Lai,WC; Kuo,CH; Chen,CH; Sheu,JK; Chen,JF |
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[光電科學研究中心] 期刊論文 |
2001 |
Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer |
Sheu,JK; Tsai,JM; Shei,SC; Lai,WC; Wen,TC; Kou,CH; Su,YK; Chang,SJ; Chi,GC |
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[光電科學研究所] 期刊論文 |
2009 |
GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars |
Lai,WC; Chen,PH; Chang,LC; Kuo,CH; Sheu,JK; Tun,CJ; Shei,SC |
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[光電科學研究所] 期刊論文 |
2009 |
Nitride-Based Asymmetric Two-Step Light-Emitting Diode With In0.08Ga0.92N Shallow Step |
Kuo,CH; Fu,YK; Yeh,CL; Tun,CJ; Chen,PH; Lai,WC; Chang,SJ |
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[光電科學與工程學系] 期刊論文 |
2010 |
GaN-Based LEDs With AZO:Y Upper Contact |
Chen,PH; Lai,WC; Peng,LC; Kuo,CH; Yeh,CL; Sheu,JK; Tun,CJ |
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[光電科學與工程學系] 期刊論文 |
2010 |
GaN-Based Light-Emitting Diodes With Pillar Structures Around the Mesa Region |
Chen,PH; Chang,LC; Tsai,CH; Lee,YC; Lai,WC; Wu,ML; Kuo,CH; Sheu,JK |
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[光電科學與工程學系] 期刊論文 |
2005 |
Nitride-based light-emitting diodes with p-AlInGaN surface layers |
Kuo,CH; Lin,CC; Chang,SJ; Hsu,YP; Tsai,JM; Lai,WC; Wang,PT |
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[光電科學與工程學系] 期刊論文 |
2004 |
Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers |
Chang,SJ; Wu,LW; Su,YK; Hsu,YP; Lai,WC; Tsai,JA; Sheu,JK; Lee,CT |
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[光電科學與工程學系] 期刊論文 |
2004 |
Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures |
Wen,TC; Chang,SJ; Lee,CT; Lai,WC; Sheu,JK |
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[光電科學與工程學系] 期刊論文 |
2004 |
Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer |
Lee,ML; Sheu,JK; Su,YK; Chang,SJ; Lai,WC; Chi,GC |
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[物理研究所] 期刊論文 |
2005 |
Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors |
Kao,CJ; Chen,MC; Tun,CJ; Chi,GC; Sheu,JK; Lai,WC; Lee,ML; Ren,F; Pearton,SJ |
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[物理研究所] 期刊論文 |
2005 |
Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metallorganic vapor phase |
Sheu,JK; Chen,SS; Lee,ML; Lai,WC; Chi,GC |
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[物理研究所] 期刊論文 |
2005 |
Rectifying characteristics of WSi0.8-GaN Schottky barrier diodes with a GaN cap layer grown at low temperature |
Sheu,JK; Lee,ML; Lai,WC; Tseng,HC; Chi,GC |
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[物理研究所] 期刊論文 |
2004 |
Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors |
Kao,CJ; Sheu,JK; Lai,WC; Lee,ML; Chen,MC; Chi,GC |
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[物理研究所] 期刊論文 |
2003 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer |
Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,SJ; Kao,CJ; Tun,CJ; Chen,MG; Chang,WH; Chi,GC; Tsai,JM |
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[物理研究所] 期刊論文 |
2003 |
GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts |
Chang,SJ; Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,CS; Kao,CJ; Chi,GC; Tsai,JA |
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[物理研究所] 期刊論文 |
2003 |
Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes |
Chang,SJ; Chen,CH; Su,YK; Sheu,JK; Lai,WC; Tsai,JM; Liu,CH; Chen,SC |
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[物理研究所] 期刊論文 |
2003 |
Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer |
Sheu,JK; Kao,CJ; Lee,ML; Lai,WC; Yeh,LS; Chi,GC; Chang,SJ; Su,YK; Tsa,JM |
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[物理研究所] 期刊論文 |
2001 |
InGaN-AlInGaN multiquantum-well LEDs |
Lai,WC; Chang,SJ; Yokoyam,M; Sheu,JK; Chen,JF |
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[物理學系] 期刊論文 |
2011 |
Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers |
Sheu,JK; Tu,SJ; Lee,ML; Yeh,YH; Yang,CC; Huang,FW; Lai,WC; Chen,CW; Chi,GC |
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[物理學系] 期刊論文 |
2010 |
Catalyst-free ZnO nanowires grown on a-plane GaN |
Chen,CW; Pan,CJ; Tsao,FC; Liu,YL; Kuo,CW; Kuo,CH; Chi,GC; Chen,PH; Lai,WC; Hsueh,TH; Tun,CJ; Chang,CY; Pearton,SJ; Ren,F |
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[電機工程研究所] 期刊論文 |
2006 |
Nitride-based photodiode at 510-nm wavelength for plastic optical fiber communications |
Shi,JW; Huang,HY; Shell,JK; Hsieh,SH; Wu,YS; Lu,JY; Huang,FH; Lai,WC |
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[電機工程學系] 期刊論文 |
2011 |
Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical-Optical Pump-Probe Technique |
Shi,JW; Huang,HW; Kuo,FM; Lai,WC; Lee,ML; Sheu,JK |
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[電機工程學系] 期刊論文 |
2011 |
The Influence of a Piezoelectric Field on the Dynamic Performance of GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer |
Shi,JW; Kuo,FM; Huang,HW; Sheu,JK; Yang,CC; Lai,WC; Lee,ML |
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[電機工程學系] 期刊論文 |
2010 |
Very-High Temperature (200 degrees C) and High-Speed Operation of Cascade GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer |
Shi,JW; Huang,HW; Kuo,FM; Sheu,JK; Lai,WC; Lee,ML |
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