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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38795


    Title: GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts
    Authors: Chen,CH;Chang,SJ;Su,YK;Chi,GC;Chi,JY;Chang,CA;Sheu,JK;Chen,JF
    Contributors: 物理研究所
    Keywords: N-GAN;DETECTORS
    Date: 2001
    Issue Date: 2010-07-08 13:38:59 (UTC+8)
    Publisher: 中央大學
    Abstract: Indium-tin-oxide (ITO) layers were deposited onto n-GaN films and/or glass substrates by electron-beam evaporation. With proper annealing, we found that we could improve the optical properties of the ITO layers and achieve a maximum transmittance of 98% a
    Relation: IEEE PHOTONICS TECHNOLOGY LETTERS
    Appears in Collections:[物理研究所] 期刊論文

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